Solid state MOSFET based hydrophone

B. Zhu, J. Zhang, V. K. Varadan, V. V. Varandan

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


In this paper, we present the design and fabrication of MEMS hydrophones on a silicon wafer using standard NMOS process technology. The effects of two MOSFET amplifiers with different W/L ratios on the hydrophone performance are investigated. A piezoelectric polymer, polyvinylidene difluoride (PVDF), is employed as the sensing material. Acoustic impedance possessed by this piezoelectric material provides a reasonable match to that of water, which makes it very attractive for underwater applications. Measurements of the hydrophone devices were carried out in a pulse tube with a frequency range of 4-10 KHz. The results reveal that the hydrophone comprising a MOSFET with larger W/L ratio provides better sensitivity.

Original languageEnglish (US)
Pages (from-to)368-377
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2000
EventSmart Structures and Materials 2000 - Smart Electronics and MEMS - Newport Beach, CA, USA
Duration: Mar 6 2000Mar 8 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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