Solid-state phase formation between Pd thin films and GaSb

J. A. Robinson; S. E. Mohney

doi:10.1007/s11664-006-0183-0

Solid-state phase formation between Pd thin films and GaSb

J. A. Robinson, S. E. Mohney

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Knowledge of the interaction between a thin metal film and a compound semiconductor can be used to engineer electrical contacts to the semiconductor. In this study, we examine the reaction between a 50 nm layer of Pd and a GaSb substrate annealed at 100-350°C for 10-360 min using transmission electron microscopy (TEM) and x-ray diffraction (XRD). We report on the formation of Pd-rich nanocrystalline and polycrystalline ternary phases at temperatures below 200°C, followed by Pd-Ga and Pd-Sb binary phases above 200°C.

Original language	English (US)
Pages (from-to)	48-55
Number of pages	8
Journal	Journal of Electronic Materials
Volume	35
Issue number	1
DOIs	https://doi.org/10.1007/s11664-006-0183-0
State	Published - Jan 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-006-0183-0

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title = "Solid-state phase formation between Pd thin films and GaSb",

abstract = "Knowledge of the interaction between a thin metal film and a compound semiconductor can be used to engineer electrical contacts to the semiconductor. In this study, we examine the reaction between a 50 nm layer of Pd and a GaSb substrate annealed at 100-350°C for 10-360 min using transmission electron microscopy (TEM) and x-ray diffraction (XRD). We report on the formation of Pd-rich nanocrystalline and polycrystalline ternary phases at temperatures below 200°C, followed by Pd-Ga and Pd-Sb binary phases above 200°C.",

author = "Robinson, {J. A.} and Mohney, {S. E.}",

note = "Funding Information: The authors acknowledge the support of DARPA through ONR Grant No. N0014-01-1-0790, monitored by Mark Rosker (DARPA), C. Wood (ONR), C. Hanson (SPAWAR), and D. Mullin (SPAWAR). They thank NDSEG for the financial support of J.A. Robinson.",

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doi = "10.1007/s11664-006-0183-0",

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AU - Robinson, J. A.

AU - Mohney, S. E.

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N2 - Knowledge of the interaction between a thin metal film and a compound semiconductor can be used to engineer electrical contacts to the semiconductor. In this study, we examine the reaction between a 50 nm layer of Pd and a GaSb substrate annealed at 100-350°C for 10-360 min using transmission electron microscopy (TEM) and x-ray diffraction (XRD). We report on the formation of Pd-rich nanocrystalline and polycrystalline ternary phases at temperatures below 200°C, followed by Pd-Ga and Pd-Sb binary phases above 200°C.

AB - Knowledge of the interaction between a thin metal film and a compound semiconductor can be used to engineer electrical contacts to the semiconductor. In this study, we examine the reaction between a 50 nm layer of Pd and a GaSb substrate annealed at 100-350°C for 10-360 min using transmission electron microscopy (TEM) and x-ray diffraction (XRD). We report on the formation of Pd-rich nanocrystalline and polycrystalline ternary phases at temperatures below 200°C, followed by Pd-Ga and Pd-Sb binary phases above 200°C.

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Solid-state phase formation between Pd thin films and GaSb

Abstract

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