Solution-processed TIPS-pentacene organic thin-film-transistor circuits

Sung Kyu Park; John E. Anthony; Thomas N. Jackson

doi:10.1109/LED.2007.905374

Solution-processed TIPS-pentacene organic thin-film-transistor circuits

Sung Kyu Park
, John E. Anthony
, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

103 Scopus citations

Abstract

We have fabricated solution-processed organic thin-film transistors (OTFTs) and circuits using triisopropylsilyl pentacene (TIPS-pentacene) as the active semiconductor material. Patterned bottom-gate solution-processed TIPS-pentacene OTFTs on glass substrates have mobility as large as 0.6 cm²/V̇ s and subthreshold slope as low as 0.4 V/dec. Seven-stage ring oscillators have oscillation frequency greater than 10 kHz and propagation delay of less than 8 μs per stage at a bias of -80 V. The 7- and 15-stage ring oscillators also operate with supply-voltage magnitude of less than 5 V.

Original language	English (US)
Pages (from-to)	877-879
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	10
DOIs	https://doi.org/10.1109/LED.2007.905374
State	Published - Oct 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.905374

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title = "Solution-processed TIPS-pentacene organic thin-film-transistor circuits",

abstract = "We have fabricated solution-processed organic thin-film transistors (OTFTs) and circuits using triisopropylsilyl pentacene (TIPS-pentacene) as the active semiconductor material. Patterned bottom-gate solution-processed TIPS-pentacene OTFTs on glass substrates have mobility as large as 0.6 cm2/{\.V} s and subthreshold slope as low as 0.4 V/dec. Seven-stage ring oscillators have oscillation frequency greater than 10 kHz and propagation delay of less than 8 μs per stage at a bias of -80 V. The 7- and 15-stage ring oscillators also operate with supply-voltage magnitude of less than 5 V.",

author = "Park, \{Sung Kyu\} and Anthony, \{John E.\} and Jackson, \{Thomas N.\}",

note = "Funding Information: Manuscript received June 12, 2007; revised July 13, 2007. This work was supported in part by the National Science Foundation through the Penn State Center for Nanoscale Science, an NSF MRSEC. The review of this letter was arranged by Editor Y. Taur.",

year = "2007",

month = oct,

doi = "10.1109/LED.2007.905374",

language = "English (US)",

volume = "28",

pages = "877--879",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Park, Sung Kyu

AU - Anthony, John E.

AU - Jackson, Thomas N.

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PY - 2007/10

Y1 - 2007/10

N2 - We have fabricated solution-processed organic thin-film transistors (OTFTs) and circuits using triisopropylsilyl pentacene (TIPS-pentacene) as the active semiconductor material. Patterned bottom-gate solution-processed TIPS-pentacene OTFTs on glass substrates have mobility as large as 0.6 cm2/V̇ s and subthreshold slope as low as 0.4 V/dec. Seven-stage ring oscillators have oscillation frequency greater than 10 kHz and propagation delay of less than 8 μs per stage at a bias of -80 V. The 7- and 15-stage ring oscillators also operate with supply-voltage magnitude of less than 5 V.

AB - We have fabricated solution-processed organic thin-film transistors (OTFTs) and circuits using triisopropylsilyl pentacene (TIPS-pentacene) as the active semiconductor material. Patterned bottom-gate solution-processed TIPS-pentacene OTFTs on glass substrates have mobility as large as 0.6 cm2/V̇ s and subthreshold slope as low as 0.4 V/dec. Seven-stage ring oscillators have oscillation frequency greater than 10 kHz and propagation delay of less than 8 μs per stage at a bias of -80 V. The 7- and 15-stage ring oscillators also operate with supply-voltage magnitude of less than 5 V.

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DO - 10.1109/LED.2007.905374

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

Solution-processed TIPS-pentacene organic thin-film-transistor circuits

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