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Source and drain contacts for germanium and III-V FETs for digital logic
Athanasios Dimoulas
, Akira Toriumi
,
Suzanne E. Mohney
Materials Science and Engineering
Materials Research Institute (MRI)
Research output
:
Contribution to journal
›
Article
›
peer-review
39
Scopus citations
Overview
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Keyphrases
Common Strategies
33%
Contact Morphology
33%
Device Processing
33%
Digital Logic
100%
Fermi Level pinning
33%
Field-effect Transistors
33%
Gate-all-around (GAA) MOSFET
100%
Germanium
100%
III-V
33%
InGaAs
33%
InSb
33%
Metal-semiconductor Contact
33%
Ohmic Contact
100%
Schottky Barrier
33%
Semiconductor Materials
33%
Small Dimension
33%
Specific Contact Resistance
33%
Transistor
66%
Transistor Technology
33%
Engineering
Feature Size
33%
Fermi Level
33%
Field Effect Transistor
100%
Field-Effect Transistor
66%
Indium Gallium Arsenide
33%
Ohmic Contacts
100%
Schottky Barrier
33%
Semiconductor Material
33%
Material Science
Contact Resistance
33%
Field Effect Transistor
100%
Germanium
100%
Indium Gallium Arsenide
33%
Schottky Barrier
33%
Semiconductor Material
33%
Transistor
66%
Computer Science
Effect Transistor
100%
Full Advantage
50%
Semiconductor Material
50%