Space-charge-limited current in thin-film diamond

S. Ashok; K. Srikanth; A. Badzian; T. Badzian; R. Messier

doi:10.1063/1.98038

Space-charge-limited current in thin-film diamond

S. Ashok, K. Srikanth, A. Badzian, T. Badzian, R. Messier

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41 Scopus citations

Abstract

The electrical conduction in thin-film diamond synthesized by microwave plasma enhanced chemical vapor deposition has been studied with metal-diamond-silicon metal-insulator-semiconductor structures. Measurements over a wide temperature range provide evidence for space-charge-limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3×10²⁰ cm^-3 eV^-1 has been deduced from the current-voltage-temperature data.

Original language	English (US)
Pages (from-to)	763-765
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	12
DOIs	https://doi.org/10.1063/1.98038
State	Published - 1987

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.98038

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title = "Space-charge-limited current in thin-film diamond",

abstract = "The electrical conduction in thin-film diamond synthesized by microwave plasma enhanced chemical vapor deposition has been studied with metal-diamond-silicon metal-insulator-semiconductor structures. Measurements over a wide temperature range provide evidence for space-charge-limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3×1020 cm-3 eV-1 has been deduced from the current-voltage-temperature data.",

author = "S. Ashok and K. Srikanth and A. Badzian and T. Badzian and R. Messier",

year = "1987",

doi = "10.1063/1.98038",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Space-charge-limited current in thin-film diamond

AU - Ashok, S.

AU - Srikanth, K.

AU - Badzian, A.

AU - Badzian, T.

AU - Messier, R.

PY - 1987

Y1 - 1987

N2 - The electrical conduction in thin-film diamond synthesized by microwave plasma enhanced chemical vapor deposition has been studied with metal-diamond-silicon metal-insulator-semiconductor structures. Measurements over a wide temperature range provide evidence for space-charge-limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3×1020 cm-3 eV-1 has been deduced from the current-voltage-temperature data.

AB - The electrical conduction in thin-film diamond synthesized by microwave plasma enhanced chemical vapor deposition has been studied with metal-diamond-silicon metal-insulator-semiconductor structures. Measurements over a wide temperature range provide evidence for space-charge-limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3×1020 cm-3 eV-1 has been deduced from the current-voltage-temperature data.

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JF - Applied Physics Letters

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Space-charge-limited current in thin-film diamond

Abstract

All Science Journal Classification (ASJC) codes

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