Spectroellipsometry for characterization of Zn1 - XCdxSe multilayered structures on GaAs

Joungchel Lee, R. W. Collins, A. R. Heyd, F. Flack, N. Samarth

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


The dielectric functions of 0.5-1.5-μm-thick Zn1 - xCdxSe (0≤x≤0.34) epilayers on (100) GaAs were measured by spectroellipsometry (SE) over the photon energy range 1.5≤E≤5.3 eV. These spectra were parameterized using the Sellmeier and Lorentz equations for photon energies below and above the fundamental gap region, respectively. We have demonstrated the usefulness of this parameterization in analyses of SE data collected on a ZnSe heterostructure and a Zn1 - xCdxSe quantum well that provide accurate layer thicknesses and compositions.

Original languageEnglish (US)
Pages (from-to)2273-2275
Number of pages3
JournalApplied Physics Letters
Issue number15
StatePublished - Oct 7 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Spectroellipsometry for characterization of Zn1 - XCdxSe multilayered structures on GaAs'. Together they form a unique fingerprint.

Cite this