Spectroellipsometry for characterization of Zn1 - XCdxSe multilayered structures on GaAs

Joungchel Lee; R. W. Collins; A. R. Heyd; F. Flack; N. Samarth

doi:10.1063/1.117531

Spectroellipsometry for characterization of Zn_{1 - X}Cd_xSe multilayered structures on GaAs

Joungchel Lee
, R. W. Collins
, A. R. Heyd
, F. Flack
, N. Samarth

Physics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The dielectric functions of 0.5-1.5-μm-thick Zn_{1 - x}Cd_xSe (0≤x≤0.34) epilayers on (100) GaAs were measured by spectroellipsometry (SE) over the photon energy range 1.5≤E≤5.3 eV. These spectra were parameterized using the Sellmeier and Lorentz equations for photon energies below and above the fundamental gap region, respectively. We have demonstrated the usefulness of this parameterization in analyses of SE data collected on a ZnSe heterostructure and a Zn_{1 - x}Cd_xSe quantum well that provide accurate layer thicknesses and compositions.

Original language	English (US)
Pages (from-to)	2273-2275
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	15
DOIs	https://doi.org/10.1063/1.117531
State	Published - Oct 7 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.117531

Cite this

@article{084681a50d9542ec971893d932a22ec7,

title = "Spectroellipsometry for characterization of Zn1 - XCdxSe multilayered structures on GaAs",

abstract = "The dielectric functions of 0.5-1.5-μm-thick Zn1 - xCdxSe (0≤x≤0.34) epilayers on (100) GaAs were measured by spectroellipsometry (SE) over the photon energy range 1.5≤E≤5.3 eV. These spectra were parameterized using the Sellmeier and Lorentz equations for photon energies below and above the fundamental gap region, respectively. We have demonstrated the usefulness of this parameterization in analyses of SE data collected on a ZnSe heterostructure and a Zn1 - xCdxSe quantum well that provide accurate layer thicknesses and compositions.",

author = "Joungchel Lee and Collins, \{R. W.\} and Heyd, \{A. R.\} and F. Flack and N. Samarth",

year = "1996",

month = oct,

day = "7",

doi = "10.1063/1.117531",

language = "English (US)",

volume = "69",

pages = "2273--2275",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Spectroellipsometry for characterization of Zn1 - XCdxSe multilayered structures on GaAs

AU - Lee, Joungchel

AU - Collins, R. W.

AU - Heyd, A. R.

AU - Flack, F.

AU - Samarth, N.

PY - 1996/10/7

Y1 - 1996/10/7

N2 - The dielectric functions of 0.5-1.5-μm-thick Zn1 - xCdxSe (0≤x≤0.34) epilayers on (100) GaAs were measured by spectroellipsometry (SE) over the photon energy range 1.5≤E≤5.3 eV. These spectra were parameterized using the Sellmeier and Lorentz equations for photon energies below and above the fundamental gap region, respectively. We have demonstrated the usefulness of this parameterization in analyses of SE data collected on a ZnSe heterostructure and a Zn1 - xCdxSe quantum well that provide accurate layer thicknesses and compositions.

AB - The dielectric functions of 0.5-1.5-μm-thick Zn1 - xCdxSe (0≤x≤0.34) epilayers on (100) GaAs were measured by spectroellipsometry (SE) over the photon energy range 1.5≤E≤5.3 eV. These spectra were parameterized using the Sellmeier and Lorentz equations for photon energies below and above the fundamental gap region, respectively. We have demonstrated the usefulness of this parameterization in analyses of SE data collected on a ZnSe heterostructure and a Zn1 - xCdxSe quantum well that provide accurate layer thicknesses and compositions.

UR - https://www.scopus.com/pages/publications/0000583967

UR - https://www.scopus.com/pages/publications/0000583967#tab=citedBy

U2 - 10.1063/1.117531

DO - 10.1063/1.117531

M3 - Article

AN - SCOPUS:0000583967

SN - 0003-6951

VL - 69

SP - 2273

EP - 2275

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Spectroellipsometry for characterization of Zn_{1 - X}Cd_xSe multilayered structures on GaAs

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this