Abstract
The dielectric functions of 0.5-1.5 μm Zn1×xCdxSe (0≤×≤0.34) epilayers on GaAs have been determined over the photon energy range 1.5≤E≤5.3 eV. These spectra have been parameterized using the Sellmeier approximation for energies less than the fundamental gap at E0 and using a sum of Lorentz oscillators above the gap region. As an example of the usefulness of the approach, expressions are provided that yield the index of refraction of Zn1×xCdxSe (0≤x≤ 0.34) for 1.5 eV≤E<E0. As a second example, we have determined the composition and thickness of a Zn1×xCdxSe quantum well between ZnSe barrier layers.
Original language | English (US) |
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Pages (from-to) | 377-382 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 406 |
State | Published - 1996 |
Event | Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Dec 1 1995 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering