Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

H. S. Craft; R. Collazo; M. D. Losego; S. Mita; Z. Sitar; J. P. Maria

doi:10.1063/1.2887878

Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

H. S. Craft
, R. Collazo
, M. D. Losego
, S. Mita
, Z. Sitar
, J. P. Maria

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report an x-ray photoelectron spectroscopy (XPS) study of the CaOGaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski-Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data suggest coalescence within the first nanometer of film growth, indicating growth behavior different from published reports of the analogous MgO-GaN system. We find 1.0±0.2 eV for the valence band offset and a 2.5±0.2 eV conduction band offset. The results are discussed in terms of their utility in oxide-nitride electronic devices.

Original language	English (US)
Article number	082907
Journal	Applied Physics Letters
Volume	92
Issue number	8
DOIs	https://doi.org/10.1063/1.2887878
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2887878

Cite this

@article{c5072e50faf24d958d70093e76eb0db1,

title = "Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface",

abstract = "We report an x-ray photoelectron spectroscopy (XPS) study of the CaOGaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski-Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data suggest coalescence within the first nanometer of film growth, indicating growth behavior different from published reports of the analogous MgO-GaN system. We find 1.0±0.2 eV for the valence band offset and a 2.5±0.2 eV conduction band offset. The results are discussed in terms of their utility in oxide-nitride electronic devices.",

author = "Craft, \{H. S.\} and R. Collazo and Losego, \{M. D.\} and S. Mita and Z. Sitar and Maria, \{J. P.\}",

note = "Funding Information: H.S.C, M.D.L., and J.-P.M. gratefully acknowledge the support of the Office of Naval Research under the Epitaxial Multifunctional Materials and Applications MURI (2004-0779) sponsored by Dr. Colin Wood and managed by Professor Alan Doolittle. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2008",

doi = "10.1063/1.2887878",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

AU - Craft, H. S.

AU - Collazo, R.

AU - Losego, M. D.

AU - Mita, S.

AU - Sitar, Z.

AU - Maria, J. P.

N1 - Funding Information: H.S.C, M.D.L., and J.-P.M. gratefully acknowledge the support of the Office of Naval Research under the Epitaxial Multifunctional Materials and Applications MURI (2004-0779) sponsored by Dr. Colin Wood and managed by Professor Alan Doolittle. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008

Y1 - 2008

N2 - We report an x-ray photoelectron spectroscopy (XPS) study of the CaOGaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski-Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data suggest coalescence within the first nanometer of film growth, indicating growth behavior different from published reports of the analogous MgO-GaN system. We find 1.0±0.2 eV for the valence band offset and a 2.5±0.2 eV conduction band offset. The results are discussed in terms of their utility in oxide-nitride electronic devices.

AB - We report an x-ray photoelectron spectroscopy (XPS) study of the CaOGaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski-Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data suggest coalescence within the first nanometer of film growth, indicating growth behavior different from published reports of the analogous MgO-GaN system. We find 1.0±0.2 eV for the valence band offset and a 2.5±0.2 eV conduction band offset. The results are discussed in terms of their utility in oxide-nitride electronic devices.

UR - https://www.scopus.com/pages/publications/40049101143

UR - https://www.scopus.com/pages/publications/40049101143#tab=citedBy

U2 - 10.1063/1.2887878

DO - 10.1063/1.2887878

M3 - Article

AN - SCOPUS:40049101143

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082907

ER -

Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this