Abstract
A simple and novel spectroscopic photo I-V method of diagnosing the homogeneity of electrically-active defect distribution in the large area AlGaN/GaN HEMT (high electron mobility transistor) epi-structure grown on 6-inch silicon wafers is reported. It is of utmost importance to produce the HEMT epi-structure electrically homogeneous across the wafer if devices with uniform electrical characteristics are to be constructed. AlGaN/GaN HEMT epi structures were grown on a silicon substrate via metal-organic chemical vapour deposition. An array of circular semi-transparent Ni Schottky contacts was prepared on top of the diced AlGaN/GaN HEMT structure substrates, which were selected from different locations of the 6-inch wafer. The information of the electrical homogeneity across the wafer was elucidated from the spectral dependences of the I-V characteristics collected from different locations of the AlGaN/GaN HEMT wafer. It is successfully demonstrated that the proposed spectroscopic photo I-V measurement technique can be employed to diagnose electrical homogeneity of the electrically-active defect distribution in the AlGaN/GaN HEMT epi structure constructed on Si with minimum sample preparation steps.
Original language | English (US) |
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Pages (from-to) | 1547-1548 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 49 |
Issue number | 24 |
DOIs | |
State | Published - Nov 21 2013 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering