Spectroscopic photo I-V diagnostics of nitride-based high electron mobility transistor structures on Si wafers

F. Tong, K. Yapabandara, C. W. Yang, M. Khanal, C. Jiao, M. Goforth, B. Ozden, A. Ahyi, M. Hamilton, G. Niu, D. A. Ewoldt, G. Chung, M. Park

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A simple and novel spectroscopic photo I-V method of diagnosing the homogeneity of electrically-active defect distribution in the large area AlGaN/GaN HEMT (high electron mobility transistor) epi-structure grown on 6-inch silicon wafers is reported. It is of utmost importance to produce the HEMT epi-structure electrically homogeneous across the wafer if devices with uniform electrical characteristics are to be constructed. AlGaN/GaN HEMT epi structures were grown on a silicon substrate via metal-organic chemical vapour deposition. An array of circular semi-transparent Ni Schottky contacts was prepared on top of the diced AlGaN/GaN HEMT structure substrates, which were selected from different locations of the 6-inch wafer. The information of the electrical homogeneity across the wafer was elucidated from the spectral dependences of the I-V characteristics collected from different locations of the AlGaN/GaN HEMT wafer. It is successfully demonstrated that the proposed spectroscopic photo I-V measurement technique can be employed to diagnose electrical homogeneity of the electrically-active defect distribution in the AlGaN/GaN HEMT epi structure constructed on Si with minimum sample preparation steps.

Original languageEnglish (US)
Pages (from-to)1547-1548
Number of pages2
JournalElectronics Letters
Volume49
Issue number24
DOIs
StatePublished - Nov 21 2013

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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