Spectroscopy of point defects in semiconductors

Matthew D. McCluskey; Michael A. Reshchikov; Hemant Ghadi; Joe F. McGlone; Steven A. Ringel; Patrick M. Lenahan; Kai Mei C. Fu; Filip Tuomisto

doi:10.1557/s43577-026-01082-2

Spectroscopy of point defects in semiconductors

Matthew D. McCluskey
, Michael A. Reshchikov
, Hemant Ghadi
, Joe F. McGlone
, Steven A. Ringel
, Patrick M. Lenahan
, Kai Mei C. Fu
, Filip Tuomisto

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

Abstract

Spectroscopic techniques are used widely to detect and characterize impurities and native defects in semiconductors. Key experimental methods include infrared transmission, photoluminescence, deep-level transient spectroscopy, deep-level optical spectroscopy, electron paramagnetic resonance, optically detected magnetic resonance, and positron annihilation measurements. This review discusses these defect spectroscopies as applied to modern semiconductor materials, with an emphasis on novel phenomena, emerging methods, and technologically important systems.

Original language	English (US)
Pages (from-to)	558-571
Number of pages	14
Journal	MRS Bulletin
Volume	51
Issue number	5
DOIs	https://doi.org/10.1557/s43577-026-01082-2
State	Published - May 2026

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Physical and Theoretical Chemistry

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10.1557/s43577-026-01082-2

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title = "Spectroscopy of point defects in semiconductors",

abstract = "Spectroscopic techniques are used widely to detect and characterize impurities and native defects in semiconductors. Key experimental methods include infrared transmission, photoluminescence, deep-level transient spectroscopy, deep-level optical spectroscopy, electron paramagnetic resonance, optically detected magnetic resonance, and positron annihilation measurements. This review discusses these defect spectroscopies as applied to modern semiconductor materials, with an emphasis on novel phenomena, emerging methods, and technologically important systems.",

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year = "2026",

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doi = "10.1557/s43577-026-01082-2",

language = "English (US)",

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AU - McCluskey, Matthew D.

AU - Reshchikov, Michael A.

AU - Ghadi, Hemant

AU - McGlone, Joe F.

AU - Ringel, Steven A.

AU - Lenahan, Patrick M.

AU - Fu, Kai Mei C.

AU - Tuomisto, Filip

PY - 2026/5

Y1 - 2026/5

N2 - Spectroscopic techniques are used widely to detect and characterize impurities and native defects in semiconductors. Key experimental methods include infrared transmission, photoluminescence, deep-level transient spectroscopy, deep-level optical spectroscopy, electron paramagnetic resonance, optically detected magnetic resonance, and positron annihilation measurements. This review discusses these defect spectroscopies as applied to modern semiconductor materials, with an emphasis on novel phenomena, emerging methods, and technologically important systems.

AB - Spectroscopic techniques are used widely to detect and characterize impurities and native defects in semiconductors. Key experimental methods include infrared transmission, photoluminescence, deep-level transient spectroscopy, deep-level optical spectroscopy, electron paramagnetic resonance, optically detected magnetic resonance, and positron annihilation measurements. This review discusses these defect spectroscopies as applied to modern semiconductor materials, with an emphasis on novel phenomena, emerging methods, and technologically important systems.

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UR - https://www.scopus.com/pages/publications/105038565899#tab=citedBy

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Spectroscopy of point defects in semiconductors

Abstract

All Science Journal Classification (ASJC) codes

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