Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices

Nicholas J. Harmon; James P. Ashton; Patrick M. Lenahan; Michael E. Flatté

doi:10.1063/5.0172275

Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices

Nicholas J. Harmon, James P. Ashton, Patrick M. Lenahan, Michael E. Flatté

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Electrically detected magnetic resonance and near-zero field magnetoresistance are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/SiO₂ MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity.

Original language	English (US)
Article number	251603
Journal	Applied Physics Letters
Volume	123
Issue number	25
DOIs	https://doi.org/10.1063/5.0172275
State	Published - Dec 18 2023

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/5.0172275

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title = "Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices",

abstract = "Electrically detected magnetic resonance and near-zero field magnetoresistance are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/SiO2 MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity.",

author = "Harmon, \{Nicholas J.\} and Ashton, \{James P.\} and Lenahan, \{Patrick M.\} and Flatt{\'e}, \{Michael E.\}",

note = "Publisher Copyright: {\textcopyright} 2023 Author(s).",

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day = "18",

doi = "10.1063/5.0172275",

language = "English (US)",

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T1 - Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices

AU - Harmon, Nicholas J.

AU - Ashton, James P.

AU - Lenahan, Patrick M.

AU - Flatté, Michael E.

PY - 2023/12/18

Y1 - 2023/12/18

N2 - Electrically detected magnetic resonance and near-zero field magnetoresistance are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/SiO2 MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity.

AB - Electrically detected magnetic resonance and near-zero field magnetoresistance are techniques that probe defect states at dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices such as the Si/SiO2 MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity.

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UR - https://www.scopus.com/inward/citedby.url?scp=85180364588&partnerID=8YFLogxK

U2 - 10.1063/5.0172275

DO - 10.1063/5.0172275

M3 - Article

AN - SCOPUS:85180364588

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VL - 123

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 251603

ER -

Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices

Abstract

All Science Journal Classification (ASJC) codes

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