Spin dependent charge pumping: A new tool for reliability studies

B. C. Bittel; P. M. Lenahan; J. T. Ryan; J. Fronheiser; A. J. Lelis

doi:10.1109/IIRW.2011.6142610

Spin dependent charge pumping: A new tool for reliability studies

B. C. Bittel, P. M. Lenahan, J. T. Ryan, J. Fronheiser, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We have developed a new technique, spin dependent charge (SDCP) pumping which combines the unrivaled analytical power of EPR to identify the atomic scale nature of point defects with charge pumping, a widely used electrical characterization technique used to study interface/near interface defects in MOSFETs. We demonstrate SDCP to be a very powerful tool with potential to be of widespread use to the MOSFET reliability community.

Original language	English (US)
Title of host publication	2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011
Pages	142-145
Number of pages	4
DOIs	https://doi.org/10.1109/IIRW.2011.6142610
State	Published - 2011
Event	2011 30th IEEE International Integrated Reliability Workshop Final Report, IRW 2011 - South Lake Tahoe, CA, United States Duration: Oct 16 2011 → Oct 20 2011

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report

Other

Other	2011 30th IEEE International Integrated Reliability Workshop Final Report, IRW 2011
Country/Territory	United States
City	South Lake Tahoe, CA
Period	10/16/11 → 10/20/11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

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10.1109/IIRW.2011.6142610

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Bittel, B. C., Lenahan, P. M., Ryan, J. T., Fronheiser, J., & Lelis, A. J. (2011). Spin dependent charge pumping: A new tool for reliability studies. In 2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011 (pp. 142-145). Article 6142610 (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IIRW.2011.6142610

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title = "Spin dependent charge pumping: A new tool for reliability studies",

abstract = "We have developed a new technique, spin dependent charge (SDCP) pumping which combines the unrivaled analytical power of EPR to identify the atomic scale nature of point defects with charge pumping, a widely used electrical characterization technique used to study interface/near interface defects in MOSFETs. We demonstrate SDCP to be a very powerful tool with potential to be of widespread use to the MOSFET reliability community.",

author = "Bittel, {B. C.} and Lenahan, {P. M.} and Ryan, {J. T.} and J. Fronheiser and Lelis, {A. J.}",

year = "2011",

doi = "10.1109/IIRW.2011.6142610",

language = "English (US)",

isbn = "9781457701153",

series = "IEEE International Integrated Reliability Workshop Final Report",

pages = "142--145",

booktitle = "2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011",

note = "2011 30th IEEE International Integrated Reliability Workshop Final Report, IRW 2011 ; Conference date: 16-10-2011 Through 20-10-2011",

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Bittel, BC, Lenahan, PM, Ryan, JT, Fronheiser, J & Lelis, AJ 2011, Spin dependent charge pumping: A new tool for reliability studies. in 2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011., 6142610, IEEE International Integrated Reliability Workshop Final Report, pp. 142-145, 2011 30th IEEE International Integrated Reliability Workshop Final Report, IRW 2011, South Lake Tahoe, CA, United States, 10/16/11. https://doi.org/10.1109/IIRW.2011.6142610

Spin dependent charge pumping: A new tool for reliability studies. / Bittel, B. C.; Lenahan, P. M.; Ryan, J. T. et al.
2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011. 2011. p. 142-145 6142610 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - We have developed a new technique, spin dependent charge (SDCP) pumping which combines the unrivaled analytical power of EPR to identify the atomic scale nature of point defects with charge pumping, a widely used electrical characterization technique used to study interface/near interface defects in MOSFETs. We demonstrate SDCP to be a very powerful tool with potential to be of widespread use to the MOSFET reliability community.

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Spin dependent charge pumping: A new tool for reliability studies

Abstract

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