Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors

B. C. Bittel; P. M. Lenahan; J. T. Ryan; J. Fronheiser; A. J. Lelis

doi:10.1063/1.3630024

Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors

B. C. Bittel, P. M. Lenahan, J. T. Ryan, J. Fronheiser, A. J. Lelis

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors. SDCP combines a widely used electrical characterization tool with the most powerful analytical technique for providing atomic scale structure of point defects in electronic materials. SDCP offers a large improvement in sensitivity over the previously established EDMR technique called spin dependent recombination, offering higher sensitivity and accessing a wider energy range within the bandgap.

Original language	English (US)
Article number	083504
Journal	Applied Physics Letters
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.3630024
State	Published - Aug 22 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3630024

Cite this

@article{f4add1a8f4eb4b75a259f178d42b49d8,

title = "Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors",

abstract = "We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors. SDCP combines a widely used electrical characterization tool with the most powerful analytical technique for providing atomic scale structure of point defects in electronic materials. SDCP offers a large improvement in sensitivity over the previously established EDMR technique called spin dependent recombination, offering higher sensitivity and accessing a wider energy range within the bandgap.",

author = "Bittel, {B. C.} and Lenahan, {P. M.} and Ryan, {J. T.} and J. Fronheiser and Lelis, {A. J.}",

note = "Funding Information: We wish to thank Thomas Aichinger for assistance in setting up the electrical measurement apparatus. The work at Penn State supported by the U.S. Department of Commerce under Award No. NIST 60NANB10D109 and the US Army Research Laboratory. Any opinions, findings, conclusions, or other recommendations expressed herein are those of the authors and do not necessarily reflect the views of the U.S. Commerce Department or the US Army Research Laboratory.",

year = "2011",

month = aug,

day = "22",

doi = "10.1063/1.3630024",

language = "English (US)",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors

AU - Bittel, B. C.

AU - Lenahan, P. M.

AU - Ryan, J. T.

AU - Fronheiser, J.

AU - Lelis, A. J.

N1 - Funding Information: We wish to thank Thomas Aichinger for assistance in setting up the electrical measurement apparatus. The work at Penn State supported by the U.S. Department of Commerce under Award No. NIST 60NANB10D109 and the US Army Research Laboratory. Any opinions, findings, conclusions, or other recommendations expressed herein are those of the authors and do not necessarily reflect the views of the U.S. Commerce Department or the US Army Research Laboratory.

PY - 2011/8/22

Y1 - 2011/8/22

N2 - We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors. SDCP combines a widely used electrical characterization tool with the most powerful analytical technique for providing atomic scale structure of point defects in electronic materials. SDCP offers a large improvement in sensitivity over the previously established EDMR technique called spin dependent recombination, offering higher sensitivity and accessing a wider energy range within the bandgap.

AB - We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors. SDCP combines a widely used electrical characterization tool with the most powerful analytical technique for providing atomic scale structure of point defects in electronic materials. SDCP offers a large improvement in sensitivity over the previously established EDMR technique called spin dependent recombination, offering higher sensitivity and accessing a wider energy range within the bandgap.

UR - http://www.scopus.com/inward/record.url?scp=80052399165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052399165&partnerID=8YFLogxK

U2 - 10.1063/1.3630024

DO - 10.1063/1.3630024

M3 - Article

AN - SCOPUS:80052399165

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083504

ER -

Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this