Chemistry
Silicon
100%
Field Effect
100%
Metal Oxide
100%
Silicon Carbide
100%
Electron Spin
50%
Ambient Reaction Temperature
50%
Dielectric Material
50%
Trap Density Measurement
50%
Deep Defect Level
50%
Keyphrases
MOSFET
100%
Spin-dependent Recombination
100%
Silicon Metal
100%
Silicon Carbide
100%
Silica
28%
Interface Traps
28%
Room Temperature
14%
Gate Dielectric
14%
Strong Correlation
14%
Electron Spin Resonance
14%
Semiconductor Devices
14%
Defect Centers
14%
One-part
14%
Deep Level Defects
14%
Recombination Current
14%
Deep Traps
14%
SiC MOSFET
14%
Physics
Field Effect Transistor
100%
Metal Oxide Semiconductor
100%
Silicon Carbide
100%
Dielectrics
50%
Room Temperature
50%
Semiconductor Device
50%
Electron Paramagnetic Resonance
50%
Material Science
Silicon
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Silicon Carbide
100%
Density
50%
Dielectric Material
50%
Electron Paramagnetic Resonance Spectroscopy
50%
Semiconductor Device
50%
Engineering
Defects
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Deep Level
100%
Powerful Tool
33%
Room Temperature
33%
Induced Change
33%
Semiconductor Device
33%
Interface Trap
33%
Gate Dielectric
33%