Spin dependent recombination at the silicon/silicon dioxide interface

P. M. Lenahan, M. A. Jupina

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


We demonstrate that spin dependent recombination (SDR) has the sensitivity to explore interface and near interface defects in metal/oxide/silicon field effect transistors (MOSFETs) in integrated circuits. We also show that the SDR response of Pb centers is at least qualitatively consistent with the standard Shockley-Read-Hall recombination model. We also show that SDR measurements in the MOS system may provide a critical evaluation of several models which have been proposed to explain the SDR effect.

Original languageEnglish (US)
Pages (from-to)191-211
Number of pages21
JournalColloids and Surfaces
Issue numberC
StatePublished - 1990

All Science Journal Classification (ASJC) codes

  • General Engineering


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