Abstract
We demonstrate that spin dependent recombination (SDR) has the sensitivity to explore interface and near interface defects in metal/oxide/silicon field effect transistors (MOSFETs) in integrated circuits. We also show that the SDR response of Pb centers is at least qualitatively consistent with the standard Shockley-Read-Hall recombination model. We also show that SDR measurements in the MOS system may provide a critical evaluation of several models which have been proposed to explain the SDR effect.
Original language | English (US) |
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Pages (from-to) | 191-211 |
Number of pages | 21 |
Journal | Colloids and Surfaces |
Volume | 45 |
Issue number | C |
DOIs | |
State | Published - 1990 |
All Science Journal Classification (ASJC) codes
- General Engineering