Spin dependent recombination at the silicon/silicon dioxide interface

P. M. Lenahan; M. A. Jupina

doi:10.1016/0166-6622(90)80023-W

Spin dependent recombination at the silicon/silicon dioxide interface

P. M. Lenahan
, M. A. Jupina

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

We demonstrate that spin dependent recombination (SDR) has the sensitivity to explore interface and near interface defects in metal/oxide/silicon field effect transistors (MOSFETs) in integrated circuits. We also show that the SDR response of P_b centers is at least qualitatively consistent with the standard Shockley-Read-Hall recombination model. We also show that SDR measurements in the MOS system may provide a critical evaluation of several models which have been proposed to explain the SDR effect.

Original language	English (US)
Pages (from-to)	191-211
Number of pages	21
Journal	Colloids and Surfaces
Volume	45
Issue number	C
DOIs	https://doi.org/10.1016/0166-6622(90)80023-W
State	Published - 1990

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1016/0166-6622(90)80023-W

Cite this

@article{3db646db7d6e4848848a92894f38dc30,

title = "Spin dependent recombination at the silicon/silicon dioxide interface",

abstract = "We demonstrate that spin dependent recombination (SDR) has the sensitivity to explore interface and near interface defects in metal/oxide/silicon field effect transistors (MOSFETs) in integrated circuits. We also show that the SDR response of Pb centers is at least qualitatively consistent with the standard Shockley-Read-Hall recombination model. We also show that SDR measurements in the MOS system may provide a critical evaluation of several models which have been proposed to explain the SDR effect.",

author = "Lenahan, \{P. M.\} and Jupina, \{M. A.\}",

note = "Funding Information: This work has been supported by the Defense Nuclear Agency under contract number DNA0001-86-C-0055 and grant number N00014-89-J-2022 and by Sandia National Laboratories under contract 03-3999. We gratefully acknowledge Greg Dunn of Massachusetts Institute of Technology, Lincoln Laboratory, Carl Schlier of IBM Federal Systems Laboratory, and Fred Sexton of Sandia National Laboratory for providing us with MOS devices used in our",

year = "1990",

doi = "10.1016/0166-6622(90)80023-W",

language = "English (US)",

volume = "45",

pages = "191--211",

journal = "Colloids and Surfaces",

issn = "0166-6622",

publisher = "Elsevier B.V.",

number = "C",

}

TY - JOUR

T1 - Spin dependent recombination at the silicon/silicon dioxide interface

AU - Lenahan, P. M.

AU - Jupina, M. A.

N1 - Funding Information: This work has been supported by the Defense Nuclear Agency under contract number DNA0001-86-C-0055 and grant number N00014-89-J-2022 and by Sandia National Laboratories under contract 03-3999. We gratefully acknowledge Greg Dunn of Massachusetts Institute of Technology, Lincoln Laboratory, Carl Schlier of IBM Federal Systems Laboratory, and Fred Sexton of Sandia National Laboratory for providing us with MOS devices used in our

PY - 1990

Y1 - 1990

N2 - We demonstrate that spin dependent recombination (SDR) has the sensitivity to explore interface and near interface defects in metal/oxide/silicon field effect transistors (MOSFETs) in integrated circuits. We also show that the SDR response of Pb centers is at least qualitatively consistent with the standard Shockley-Read-Hall recombination model. We also show that SDR measurements in the MOS system may provide a critical evaluation of several models which have been proposed to explain the SDR effect.

AB - We demonstrate that spin dependent recombination (SDR) has the sensitivity to explore interface and near interface defects in metal/oxide/silicon field effect transistors (MOSFETs) in integrated circuits. We also show that the SDR response of Pb centers is at least qualitatively consistent with the standard Shockley-Read-Hall recombination model. We also show that SDR measurements in the MOS system may provide a critical evaluation of several models which have been proposed to explain the SDR effect.

UR - https://www.scopus.com/pages/publications/0025419448

UR - https://www.scopus.com/pages/publications/0025419448#tab=citedBy

U2 - 10.1016/0166-6622(90)80023-W

DO - 10.1016/0166-6622(90)80023-W

M3 - Article

AN - SCOPUS:0025419448

SN - 0166-6622

VL - 45

SP - 191

EP - 211

JO - Colloids and Surfaces

JF - Colloids and Surfaces

IS - C

ER -

Spin dependent recombination at the silicon/silicon dioxide interface

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this