Spin dependent recombination in CdTe/CdS solar cells

S. I. Goodridge; P. M. Lenahan; C. D. Young; M. Quevedo-Lopez; J. Avila-Avendano

doi:10.1109/PVSC.2016.7749880

Spin dependent recombination in CdTe/CdS solar cells

S. I. Goodridge
, P. M. Lenahan
, C. D. Young
, M. Quevedo-Lopez
, J. Avila-Avendano

Engineering Science and Mechanics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report upon a new analytical approach for cadmium telluride/cadmium sulfide photovoltaic cells that is directly and exclusively sensitive to recombination center defects within the devices. The apparatus required to carry out these measurements is relatively straightforward and the response is robust. The measurements exploit the fact that recombination events through deep level defects are spin dependent and the presence of relatively small magnetic fields can alter spin dependent phenomena. The measurement involves small changes in the recombination current as a function of magnetic field when device current is strongly affected by recombination events.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1553-1556
Number of pages	4
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749880
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7749880

Cite this

Goodridge, S. I., Lenahan, P. M., Young, C. D., Quevedo-Lopez, M., & Avila-Avendano, J. (2016). Spin dependent recombination in CdTe/CdS solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 1553-1556). Article 7749880 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749880

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title = "Spin dependent recombination in CdTe/CdS solar cells",

abstract = "We report upon a new analytical approach for cadmium telluride/cadmium sulfide photovoltaic cells that is directly and exclusively sensitive to recombination center defects within the devices. The apparatus required to carry out these measurements is relatively straightforward and the response is robust. The measurements exploit the fact that recombination events through deep level defects are spin dependent and the presence of relatively small magnetic fields can alter spin dependent phenomena. The measurement involves small changes in the recombination current as a function of magnetic field when device current is strongly affected by recombination events.",

author = "Goodridge, \{S. I.\} and Lenahan, \{P. M.\} and Young, \{C. D.\} and M. Quevedo-Lopez and J. Avila-Avendano",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7749880",

language = "English (US)",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

address = "United States",

}

Goodridge, SI, Lenahan, PM, Young, CD, Quevedo-Lopez, M & Avila-Avendano, J 2016, Spin dependent recombination in CdTe/CdS solar cells. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749880, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 1553-1556, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749880

Spin dependent recombination in CdTe/CdS solar cells. / Goodridge, S. I.; Lenahan, P. M.; Young, C. D. et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1553-1556 7749880 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Spin dependent recombination in CdTe/CdS solar cells

AU - Goodridge, S. I.

AU - Lenahan, P. M.

AU - Young, C. D.

AU - Quevedo-Lopez, M.

AU - Avila-Avendano, J.

PY - 2016/11/18

Y1 - 2016/11/18

N2 - We report upon a new analytical approach for cadmium telluride/cadmium sulfide photovoltaic cells that is directly and exclusively sensitive to recombination center defects within the devices. The apparatus required to carry out these measurements is relatively straightforward and the response is robust. The measurements exploit the fact that recombination events through deep level defects are spin dependent and the presence of relatively small magnetic fields can alter spin dependent phenomena. The measurement involves small changes in the recombination current as a function of magnetic field when device current is strongly affected by recombination events.

AB - We report upon a new analytical approach for cadmium telluride/cadmium sulfide photovoltaic cells that is directly and exclusively sensitive to recombination center defects within the devices. The apparatus required to carry out these measurements is relatively straightforward and the response is robust. The measurements exploit the fact that recombination events through deep level defects are spin dependent and the presence of relatively small magnetic fields can alter spin dependent phenomena. The measurement involves small changes in the recombination current as a function of magnetic field when device current is strongly affected by recombination events.

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U2 - 10.1109/PVSC.2016.7749880

DO - 10.1109/PVSC.2016.7749880

M3 - Conference contribution

AN - SCOPUS:85003707595

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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EP - 1556

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Goodridge SI, Lenahan PM, Young CD, Quevedo-Lopez M, Avila-Avendano J. Spin dependent recombination in CdTe/CdS solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1553-1556. 7749880. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749880

Spin dependent recombination in CdTe/CdS solar cells

Abstract

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UN SDGs

All Science Journal Classification (ASJC) codes

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