Spin dependent trapping at a silicon grain boundary

P. M. Lenahan; W. K. Schubert

doi:10.1016/0038-1098(83)91060-8

Spin dependent trapping at a silicon grain boundary

P. M. Lenahan, W. K. Schubert

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We have observed, for the first time, spin dependent trapping in a silicon grain boundary. The results are quantitatively explained in terms of paramagnetic "dangling bond" interface traps and a majority carrier thermionic emission model. This is a sensitive and informative probe of defects in grain boundaries.

Original language	English (US)
Pages (from-to)	423-425
Number of pages	3
Journal	Solid State Communications
Volume	47
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(83)91060-8
State	Published - Aug 1983

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/0038-1098(83)91060-8

Cite this

@article{b7d6050e49c84e2d9d322ee2dd7f585e,

title = "Spin dependent trapping at a silicon grain boundary",

abstract = "We have observed, for the first time, spin dependent trapping in a silicon grain boundary. The results are quantitatively explained in terms of paramagnetic {"}dangling bond{"} interface traps and a majority carrier thermionic emission model. This is a sensitive and informative probe of defects in grain boundaries.",

author = "Lenahan, {P. M.} and Schubert, {W. K.}",

year = "1983",

month = aug,

doi = "10.1016/0038-1098(83)91060-8",

language = "English (US)",

volume = "47",

pages = "423--425",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "6",

}

TY - JOUR

T1 - Spin dependent trapping at a silicon grain boundary

AU - Lenahan, P. M.

AU - Schubert, W. K.

PY - 1983/8

Y1 - 1983/8

N2 - We have observed, for the first time, spin dependent trapping in a silicon grain boundary. The results are quantitatively explained in terms of paramagnetic "dangling bond" interface traps and a majority carrier thermionic emission model. This is a sensitive and informative probe of defects in grain boundaries.

AB - We have observed, for the first time, spin dependent trapping in a silicon grain boundary. The results are quantitatively explained in terms of paramagnetic "dangling bond" interface traps and a majority carrier thermionic emission model. This is a sensitive and informative probe of defects in grain boundaries.

UR - http://www.scopus.com/inward/record.url?scp=0020804831&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020804831&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(83)91060-8

DO - 10.1016/0038-1098(83)91060-8

M3 - Article

AN - SCOPUS:0020804831

SN - 0038-1098

VL - 47

SP - 423

EP - 425

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Spin dependent trapping at a silicon grain boundary

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this