Abstract
The study of spin-dependent phenomena involving free carriers in magnetic semiconductor heterostructures has seen rapid advances over the past year, allowing fresh insights into spin transport, localization and carrier-mediated magnetism. These experiments have been enabled by the realization of extrinsically and intrinsically doped magnetic semiconductor heterostructures derived from the II-VI and III-V semiconductors.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 198-202 |
| Number of pages | 5 |
| Journal | Current Opinion in Solid State and Materials Science |
| Volume | 3 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jan 1 1998 |
All Science Journal Classification (ASJC) codes
- General Materials Science