Spin valve effect in self-exchange biased ferromagnetic metal/semiconductor bilayers

M. Zhu, M. J. Wilson, B. L. Sheu, P. Mitra, P. Schiffer, N. Samarth

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs (Ga,Mn) As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, resulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAsp-GaAs (Ga,Mn) As trilayers show that the exchange coupling diminishes with spatial separation between the layers.

Original languageEnglish (US)
Article number192503
JournalApplied Physics Letters
Issue number19
StatePublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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