Spray-Deposited ITO-Silicon SIS Heterojunction Solar Cells

S. Ashok; Stephen J. Fonash; Panduranga P. Sharma

doi:10.1109/T-ED.1980.19928

Spray-Deposited ITO-Silicon SIS Heterojunction Solar Cells

S. Ashok, Stephen J. Fonash, Panduranga P. Sharma

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Abstract

A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type silicon using spray-deposited indium-tin-oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I layer have been optimized to yield the following photovoltaic parameters on O.5-Ω · cm n-Si: V_OC = O.52 V, J_SC = 31.5 mA/cm² (adjusted for Ag grid area), FF = O.70, and illuminated area η = 11.5 percent. The dark I–V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.

Original language	English (US)
Pages (from-to)	725-730
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	27
Issue number	4
DOIs	https://doi.org/10.1109/T-ED.1980.19928
State	Published - Apr 1980

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1980.19928

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title = "Spray-Deposited ITO-Silicon SIS Heterojunction Solar Cells",

abstract = "A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type silicon using spray-deposited indium-tin-oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I layer have been optimized to yield the following photovoltaic parameters on O.5-Ω · cm n-Si: VOC = O.52 V, JSC = 31.5 mA/cm2 (adjusted for Ag grid area), FF = O.70, and illuminated area η = 11.5 percent. The dark I–V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.",

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T1 - Spray-Deposited ITO-Silicon SIS Heterojunction Solar Cells

AU - Ashok, S.

AU - Fonash, Stephen J.

AU - Sharma, Panduranga P.

PY - 1980/4

Y1 - 1980/4

N2 - A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type silicon using spray-deposited indium-tin-oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I layer have been optimized to yield the following photovoltaic parameters on O.5-Ω · cm n-Si: VOC = O.52 V, JSC = 31.5 mA/cm2 (adjusted for Ag grid area), FF = O.70, and illuminated area η = 11.5 percent. The dark I–V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.

AB - A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type silicon using spray-deposited indium-tin-oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I layer have been optimized to yield the following photovoltaic parameters on O.5-Ω · cm n-Si: VOC = O.52 V, JSC = 31.5 mA/cm2 (adjusted for Ag grid area), FF = O.70, and illuminated area η = 11.5 percent. The dark I–V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.

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JO - IEEE Transactions on Electron Devices

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Spray-Deposited ITO-Silicon SIS Heterojunction Solar Cells

Abstract

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