A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type silicon using spray-deposited indium-tin-oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I layer have been optimized to yield the following photovoltaic parameters on O.5-Ω · cm n-Si: VOC = O.52 V, JSC = 31.5 mA/cm2 (adjusted for Ag grid area), FF = O.70, and illuminated area η = 11.5 percent. The dark I–V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering