SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES.

M. J. Kardauskas; S. J. Fonash; S Ashok; S. V. Krishnaswamy; R. F. Messier

doi:10.1116/1.570789

SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES.

M. J. Kardauskas, S. J. Fonash, S Ashok, S. V. Krishnaswamy, R. F. Messier

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Sputtered Fe//3O//4 films form rectifying junctions to p-type silicon but ohmic contacts to n-type Si. Ohmic contacts to this Fe//3O//4 can be provided by Au, Al, or spray-deposited ITO. The redox couple Fe (CN)//6**3** minus /Fe(CN)//6**4** minus also appears to make an effective ohmic contact to this iron oxide. The photovoltaic and electrical characteristics of the Fe//3O//4/p-Si heterojunction are found to depend strongly on the Fe//3O//4 film thickness.

Original language	English (US)
Pages (from-to)	376-378
Number of pages	3
Journal	Journal of vacuum science & technology
Volume	18
Issue number	2
DOIs	https://doi.org/10.1116/1.570789
State	Published - Jan 1 1980
Event	Proc of the Natl Symp of the Am Vac Soc, 27th, Pt 1 - Detroit, MI, Engl Duration: Oct 13 1980 → Oct 17 1980

All Science Journal Classification (ASJC) codes

General Engineering

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES.",

abstract = "Sputtered Fe//3O//4 films form rectifying junctions to p-type silicon but ohmic contacts to n-type Si. Ohmic contacts to this Fe//3O//4 can be provided by Au, Al, or spray-deposited ITO. The redox couple Fe (CN)//6**3** minus /Fe(CN)//6**4** minus also appears to make an effective ohmic contact to this iron oxide. The photovoltaic and electrical characteristics of the Fe//3O//4/p-Si heterojunction are found to depend strongly on the Fe//3O//4 film thickness.",

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T1 - SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES.

AU - Kardauskas, M. J.

AU - Fonash, S. J.

AU - Ashok, S

AU - Krishnaswamy, S. V.

AU - Messier, R. F.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - Sputtered Fe//3O//4 films form rectifying junctions to p-type silicon but ohmic contacts to n-type Si. Ohmic contacts to this Fe//3O//4 can be provided by Au, Al, or spray-deposited ITO. The redox couple Fe (CN)//6**3** minus /Fe(CN)//6**4** minus also appears to make an effective ohmic contact to this iron oxide. The photovoltaic and electrical characteristics of the Fe//3O//4/p-Si heterojunction are found to depend strongly on the Fe//3O//4 film thickness.

AB - Sputtered Fe//3O//4 films form rectifying junctions to p-type silicon but ohmic contacts to n-type Si. Ohmic contacts to this Fe//3O//4 can be provided by Au, Al, or spray-deposited ITO. The redox couple Fe (CN)//6**3** minus /Fe(CN)//6**4** minus also appears to make an effective ohmic contact to this iron oxide. The photovoltaic and electrical characteristics of the Fe//3O//4/p-Si heterojunction are found to depend strongly on the Fe//3O//4 film thickness.

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ER -

SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES.

Abstract

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