M. J. Kardauskas, S. J. Fonash, S Ashok, S. V. Krishnaswamy, R. F. Messier

Research output: Contribution to journalConference articlepeer-review

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Sputtered Fe//3O//4 films form rectifying junctions to p-type silicon but ohmic contacts to n-type Si. Ohmic contacts to this Fe//3O//4 can be provided by Au, Al, or spray-deposited ITO. The redox couple Fe (CN)//6**3** minus /Fe(CN)//6**4** minus also appears to make an effective ohmic contact to this iron oxide. The photovoltaic and electrical characteristics of the Fe//3O//4/p-Si heterojunction are found to depend strongly on the Fe//3O//4 film thickness.

Original languageEnglish (US)
Pages (from-to)376-378
Number of pages3
JournalJournal of vacuum science & technology
Issue number2
StatePublished - Jan 1 1980
EventProc of the Natl Symp of the Am Vac Soc, 27th, Pt 1 - Detroit, MI, Engl
Duration: Oct 13 1980Oct 17 1980

All Science Journal Classification (ASJC) codes

  • General Engineering


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