TY - GEN
T1 - Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates
AU - Benoit, Robert R.
AU - Cheng, Christopher Y.
AU - Rudy, Ryan Q.
AU - Polcawich, Ronald G.
AU - Pulskamp, Jeffrey S.
AU - Potrepka, Daniel M.
AU - Hanrahan, Brendan M.
AU - Trolier-Mckinstry, Susan
N1 - Funding Information:
ACKNOWLEDGMENT The authors would like to thank K. M. Grove and B. J. Gibbons at Oregon State University for their help with XRD scans, S. K. Isaacson, B. K. Power, J. L. Martin, and R. A. Cable at the US Army Research Lab for their assistance with device fabrication and testing. This work was funded by the US Army Research Laboratory.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/9/6
Y1 - 2018/9/6
N2 - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.
AB - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.
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U2 - 10.1109/IMWS-AMP.2018.8457139
DO - 10.1109/IMWS-AMP.2018.8457139
M3 - Conference contribution
AN - SCOPUS:85057612527
T3 - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
BT - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
Y2 - 16 July 2018 through 18 July 2018
ER -