Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

Jay J. Senkevich; B. Wang; J. B. Fortin; M. C. Nielsen; J. F. McDonald; T. M. Lu; G. M. Nuesca; G. G. Peterson; S. C. Selbrede; M. T. Weise

doi:10.1007/s11664-003-0224-x

Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

Jay J. Senkevich, B. Wang, J. B. Fortin, M. C. Nielsen, J. F. McDonald, T. M. Lu, G. M. Nuesca, G. G. Peterson, S. C. Selbrede, M. T. Weise

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Abstract

The fluorine stability of two parylenes, aliphatic-fluorinated AF-4 (α, α, α′, α′ poly(p-tetrafluoroxylylene) and aromatic-fluorinated VT-4 (2, 3, 5, 6 poly(p-tetrafluoroxylylene), were investigated underneath Al, Al₂O₃, and TaN_X overlayers with and without exposure to oxygen reactive-ion etching (RIE). No fluorine diffusion was observed for Al films deposited onto the as-received parylenes. However, after oxygen RIE, x-ray photoelectron spectroscopy (XPS) depth profiling detected fluorine diffusion throughout Al and to a lesser extent Al₂O₃ but in contrast to Ta_2.67N. Metal-fluoride bonding was evident at the metal/parylene interface for all the overlayers after the parylene was exposed to oxygen RIE and annealed.

Original language	English (US)
Pages (from-to)	925-931
Number of pages	7
Journal	Journal of Electronic Materials
Volume	32
Issue number	9
DOIs	https://doi.org/10.1007/s11664-003-0224-x
State	Published - Sep 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Senkevich, J. J., Wang, B., Fortin, J. B., Nielsen, M. C., McDonald, J. F., Lu, T. M., Nuesca, G. M., Peterson, G. G., Selbrede, S. C., & Weise, M. T. (2003). Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers. Journal of Electronic Materials, 32(9), 925-931. https://doi.org/10.1007/s11664-003-0224-x

@article{dd4c03be60b04a6096a27e0bc6413efe,

title = "Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers",

abstract = "The fluorine stability of two parylenes, aliphatic-fluorinated AF-4 (α, α, α′, α′ poly(p-tetrafluoroxylylene) and aromatic-fluorinated VT-4 (2, 3, 5, 6 poly(p-tetrafluoroxylylene), were investigated underneath Al, Al2O3, and TaNX overlayers with and without exposure to oxygen reactive-ion etching (RIE). No fluorine diffusion was observed for Al films deposited onto the as-received parylenes. However, after oxygen RIE, x-ray photoelectron spectroscopy (XPS) depth profiling detected fluorine diffusion throughout Al and to a lesser extent Al2O3 but in contrast to Ta2.67N. Metal-fluoride bonding was evident at the metal/parylene interface for all the overlayers after the parylene was exposed to oxygen RIE and annealed.",

author = "Senkevich, \{Jay J.\} and B. Wang and Fortin, \{J. B.\} and Nielsen, \{M. C.\} and McDonald, \{J. F.\} and Lu, \{T. M.\} and Nuesca, \{G. M.\} and Peterson, \{G. G.\} and Selbrede, \{S. C.\} and Weise, \{M. T.\}",

note = "Funding Information: The authors thank the SRC for its financial support through the Center for Advanced Interconnects and Systems Technology at Rensselaer Polytechnic Institute and to Specialty Coating Systems for providing the parylene AF-4 samples. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2003",

month = sep,

doi = "10.1007/s11664-003-0224-x",

language = "English (US)",

volume = "32",

pages = "925--931",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "9",

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TY - JOUR

T1 - Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

AU - Senkevich, Jay J.

AU - Wang, B.

AU - Fortin, J. B.

AU - Nielsen, M. C.

AU - McDonald, J. F.

AU - Lu, T. M.

AU - Nuesca, G. M.

AU - Peterson, G. G.

AU - Selbrede, S. C.

AU - Weise, M. T.

N1 - Funding Information: The authors thank the SRC for its financial support through the Center for Advanced Interconnects and Systems Technology at Rensselaer Polytechnic Institute and to Specialty Coating Systems for providing the parylene AF-4 samples. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2003/9

Y1 - 2003/9

N2 - The fluorine stability of two parylenes, aliphatic-fluorinated AF-4 (α, α, α′, α′ poly(p-tetrafluoroxylylene) and aromatic-fluorinated VT-4 (2, 3, 5, 6 poly(p-tetrafluoroxylylene), were investigated underneath Al, Al2O3, and TaNX overlayers with and without exposure to oxygen reactive-ion etching (RIE). No fluorine diffusion was observed for Al films deposited onto the as-received parylenes. However, after oxygen RIE, x-ray photoelectron spectroscopy (XPS) depth profiling detected fluorine diffusion throughout Al and to a lesser extent Al2O3 but in contrast to Ta2.67N. Metal-fluoride bonding was evident at the metal/parylene interface for all the overlayers after the parylene was exposed to oxygen RIE and annealed.

AB - The fluorine stability of two parylenes, aliphatic-fluorinated AF-4 (α, α, α′, α′ poly(p-tetrafluoroxylylene) and aromatic-fluorinated VT-4 (2, 3, 5, 6 poly(p-tetrafluoroxylylene), were investigated underneath Al, Al2O3, and TaNX overlayers with and without exposure to oxygen reactive-ion etching (RIE). No fluorine diffusion was observed for Al films deposited onto the as-received parylenes. However, after oxygen RIE, x-ray photoelectron spectroscopy (XPS) depth profiling detected fluorine diffusion throughout Al and to a lesser extent Al2O3 but in contrast to Ta2.67N. Metal-fluoride bonding was evident at the metal/parylene interface for all the overlayers after the parylene was exposed to oxygen RIE and annealed.

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SN - 0361-5235

VL - 32

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

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