Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride

David T. Krick; P. M. Lenahan; J. Kanicki

doi:10.1063/1.98362

Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride

David T. Krick, P. M. Lenahan, J. Kanicki

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Abstract

Room-temperature stable paramagnetic defects have been induced in hydrogenated amorphous silicon nitride films by exposure to sub-band-gap ultraviolet light. These defects are almost certainly trivalent silicon centers which can be completely annealed at temperatures higher than 250°C. These defects seem similar in chemical origin to light-induced centers in hydrogenated amorphous silicon and defects in irradiated metal-oxide-semiconductor field-effect transistors.

Original language	English (US)
Pages (from-to)	608-610
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	8
DOIs	https://doi.org/10.1063/1.98362
State	Published - 1987

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.98362

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title = "Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride",

abstract = "Room-temperature stable paramagnetic defects have been induced in hydrogenated amorphous silicon nitride films by exposure to sub-band-gap ultraviolet light. These defects are almost certainly trivalent silicon centers which can be completely annealed at temperatures higher than 250°C. These defects seem similar in chemical origin to light-induced centers in hydrogenated amorphous silicon and defects in irradiated metal-oxide-semiconductor field-effect transistors.",

author = "Krick, {David T.} and Lenahan, {P. M.} and J. Kanicki",

year = "1987",

doi = "10.1063/1.98362",

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pages = "608--610",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Lenahan, P. M.

AU - Kanicki, J.

PY - 1987

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N2 - Room-temperature stable paramagnetic defects have been induced in hydrogenated amorphous silicon nitride films by exposure to sub-band-gap ultraviolet light. These defects are almost certainly trivalent silicon centers which can be completely annealed at temperatures higher than 250°C. These defects seem similar in chemical origin to light-induced centers in hydrogenated amorphous silicon and defects in irradiated metal-oxide-semiconductor field-effect transistors.

AB - Room-temperature stable paramagnetic defects have been induced in hydrogenated amorphous silicon nitride films by exposure to sub-band-gap ultraviolet light. These defects are almost certainly trivalent silicon centers which can be completely annealed at temperatures higher than 250°C. These defects seem similar in chemical origin to light-induced centers in hydrogenated amorphous silicon and defects in irradiated metal-oxide-semiconductor field-effect transistors.

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M3 - Article

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JF - Applied Physics Letters

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Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride

Abstract

All Science Journal Classification (ASJC) codes

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