Stacked pentacene layer organic thin-film transistors with improved characteristics

Y. Y. Lin, D. J. Gundlach, S. F. Nelson, T. N. Jackson

Research output: Contribution to journalArticlepeer-review

953 Scopus citations

Abstract

Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFT's) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm2/V-s, on/off current ratio larger than 108, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.

Original languageEnglish (US)
Pages (from-to)606-608
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number12
DOIs
StatePublished - Dec 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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