Static and dynamic characterization of a GaN-on-GaN 600 v, 2 a vertical transistor

Amy Romero; Christina DiMarino; Rolando Burgos; Ray Li; Mary Chen; Yu Cao; Rongming Chu

doi:10.1109/ECCE.2017.8095812

Static and dynamic characterization of a GaN-on-GaN 600 v, 2 a vertical transistor

Amy Romero
, Christina DiMarino
, Rolando Burgos
, Ray Li
, Mary Chen
, Yu Cao
, Rongming Chu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

Vertical GaN power semiconductors promise higher power with faster switching speeds but the development of this technology has been slowed. This is due to the expense and lack of familiarity with GaN substrates. This paper will detail the functionality of HRL’s cutting-edge vertical GaN transistor which is mounted onto a specially made PCB and tested. The testing consists of a static characterization which shows a breakdown voltage of 600 V, as well as the transfer characteristics, output characteristics, and the on-state resistance with respect to current. The device is then switched at various voltages and currents with voltage switching speeds up to 97 V/ns. The device is successfully switched up to 450 V under a 2 A load current.

Original language	English (US)
Title of host publication	2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	413-418
Number of pages	6
ISBN (Electronic)	9781509029983
DOIs	https://doi.org/10.1109/ECCE.2017.8095812
State	Published - Nov 3 2017
Event	9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017 - Cincinnati, United States Duration: Oct 1 2017 → Oct 5 2017

Publication series

Name	2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
Volume	2017-January

Other

Other	9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017
Country/Territory	United States
City	Cincinnati
Period	10/1/17 → 10/5/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Energy Engineering and Power Technology
Electrical and Electronic Engineering
Renewable Energy, Sustainability and the Environment
Control and Optimization

Access to Document

10.1109/ECCE.2017.8095812

Cite this

Romero, A., DiMarino, C., Burgos, R., Li, R., Chen, M., Cao, Y., & Chu, R. (2017). Static and dynamic characterization of a GaN-on-GaN 600 v, 2 a vertical transistor. In 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017 (pp. 413-418). Article 8095812 (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2017.8095812

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title = "Static and dynamic characterization of a GaN-on-GaN 600 v, 2 a vertical transistor",

abstract = "Vertical GaN power semiconductors promise higher power with faster switching speeds but the development of this technology has been slowed. This is due to the expense and lack of familiarity with GaN substrates. This paper will detail the functionality of HRL{\textquoteright}s cutting-edge vertical GaN transistor which is mounted onto a specially made PCB and tested. The testing consists of a static characterization which shows a breakdown voltage of 600 V, as well as the transfer characteristics, output characteristics, and the on-state resistance with respect to current. The device is then switched at various voltages and currents with voltage switching speeds up to 97 V/ns. The device is successfully switched up to 450 V under a 2 A load current.",

author = "Amy Romero and Christina DiMarino and Rolando Burgos and Ray Li and Mary Chen and Yu Cao and Rongming Chu",

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Romero, A, DiMarino, C, Burgos, R, Li, R, Chen, M, Cao, Y & Chu, R 2017, Static and dynamic characterization of a GaN-on-GaN 600 v, 2 a vertical transistor. in 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017., 8095812, 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 413-418, 9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017, Cincinnati, United States, 10/1/17. https://doi.org/10.1109/ECCE.2017.8095812

Static and dynamic characterization of a GaN-on-GaN 600 v, 2 a vertical transistor. / Romero, Amy; DiMarino, Christina; Burgos, Rolando et al.
2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 413-418 8095812 (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Static and dynamic characterization of a GaN-on-GaN 600 v, 2 a vertical transistor

AU - Romero, Amy

AU - DiMarino, Christina

AU - Burgos, Rolando

AU - Li, Ray

AU - Chen, Mary

AU - Cao, Yu

AU - Chu, Rongming

PY - 2017/11/3

Y1 - 2017/11/3

N2 - Vertical GaN power semiconductors promise higher power with faster switching speeds but the development of this technology has been slowed. This is due to the expense and lack of familiarity with GaN substrates. This paper will detail the functionality of HRL’s cutting-edge vertical GaN transistor which is mounted onto a specially made PCB and tested. The testing consists of a static characterization which shows a breakdown voltage of 600 V, as well as the transfer characteristics, output characteristics, and the on-state resistance with respect to current. The device is then switched at various voltages and currents with voltage switching speeds up to 97 V/ns. The device is successfully switched up to 450 V under a 2 A load current.

AB - Vertical GaN power semiconductors promise higher power with faster switching speeds but the development of this technology has been slowed. This is due to the expense and lack of familiarity with GaN substrates. This paper will detail the functionality of HRL’s cutting-edge vertical GaN transistor which is mounted onto a specially made PCB and tested. The testing consists of a static characterization which shows a breakdown voltage of 600 V, as well as the transfer characteristics, output characteristics, and the on-state resistance with respect to current. The device is then switched at various voltages and currents with voltage switching speeds up to 97 V/ns. The device is successfully switched up to 450 V under a 2 A load current.

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M3 - Conference contribution

AN - SCOPUS:85041485207

T3 - 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017

SP - 413

EP - 418

BT - 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017

Y2 - 1 October 2017 through 5 October 2017

ER -

Romero A, DiMarino C, Burgos R, Li R, Chen M, Cao Y et al. Static and dynamic characterization of a GaN-on-GaN 600 v, 2 a vertical transistor. In 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 413-418. 8095812. (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017). doi: 10.1109/ECCE.2017.8095812

Static and dynamic characterization of a GaN-on-GaN 600 v, 2 a vertical transistor

Abstract

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Other

UN SDGs

All Science Journal Classification (ASJC) codes

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