Static and dynamic spectroscopy of (Al,Ga)AsGaAs microdisk lasers with interface fluctuation quantum dots

We have studied the steady state and dynamic optical properties of semiconductor microdisk lasers whose active region contains interface fluctuation quantum dots in GaAs(Ga,Al) As quantum wells. Steady-state measurements of the stimulated emission via whispering gallery modes yield a quality factor Q∼5600 and a coupling constant β∼0.09. The broad gain spectrum produces mode hopping between spectrally adjacent whispering gallery modes as a function of temperature and excitation power. Time- and energy-resolved photoluminescence measurements show that the emission rise and decay rates increase significantly with excitation power. Marked differences are observed between the radiative decay rates in processed and unprocessed samples.