Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire

Haoyue Zhu, Nadire Nayir, Tanushree H. Choudhury, Anushka Bansal, Benjamin Huet, Kunyan Zhang, Alexander A. Puretzky, Saiphaneendra Bachu, Krystal York, Thomas V. Mc Knight, Nicholas Trainor, Aaryan Oberoi, Ke Wang, Saptarshi Das, Robert A. Makin, Steven M. Durbin, Shengxi Huang, Nasim Alem, Vincent H. Crespi, Adri C.T. van DuinJoan M. Redwing

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Epitaxial growth of two-dimensional transition metal dichalcogenides on sapphire has emerged as a promising route to wafer-scale single-crystal films. Steps on the sapphire act as sites for transition metal dichalcogenide nucleation and can impart a preferred domain orientation, resulting in a substantial reduction in mirror twins. Here we demonstrate control of both the nucleation site and unidirectional growth direction of WSe2 on c-plane sapphire by metal–organic chemical vapour deposition. The unidirectional orientation is found to be intimately tied to growth conditions via changes in the sapphire surface chemistry that control the step edge location of WSe2 nucleation, imparting either a 0° or 60° orientation relative to the underlying sapphire lattice. The results provide insight into the role of surface chemistry on transition metal dichalcogenide nucleation and domain alignment and demonstrate the ability to engineer domain orientation over wafer-scale substrates.

Original languageEnglish (US)
Pages (from-to)1295-1302
Number of pages8
JournalNature nanotechnology
Volume18
Issue number11
DOIs
StatePublished - Nov 2023

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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