Step-flow growth of perovskite PbTiO3 thin films epitaxially grown on a miscut SrTiO3 substrate

Kiyotaka Wasa; Yoko Haneda; Toshifumi Sato; Hideaki Adachi; Isaku Kanno; Darrell G. Schlom; S. Trolier-McKinstry; Qing Gang; Chang-Beom

doi:10.1117/12.335874

Step-flow growth of perovskite PbTiO₃ thin films epitaxially grown on a miscut SrTiO₃ substrate

Kiyotaka Wasa, Yoko Haneda, Toshifumi Sato, Hideaki Adachi, Isaku Kanno, Darrell G. Schlom, S. Trolier-McKinstry, Qing Gang, Chang-Beom

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

Continuous single crystal (001)PbTiO₃ thin films under a step-flow growth mode were epitaxially grown on the miscut (001)SrTiO₃ substrate with miscut angle of 1.7°. A planar magnetron sputtering system was used for the epitaxial growth. The film thickness was ranged from 5 to 250 nm. The surface of the sputtered PbTiO₃ thin films comprised periodic striped patterns with step lines and atomically flat terraces. The typical step height and terrace width were 3 nm and 200 nm, respectively. The partial oxygen pressure during sputtering deposition affected the stability of the step-flow growth mode. Lower partial oxygen pressure stabilized the step-flow growth mode resulting in a layer growth. The PT thin films include the stress due to the tetragonal lattice deformation.

Original language	English (US)
Pages (from-to)	182-189
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3481
DOIs	https://doi.org/10.1117/12.335874
State	Published - 1998
Event	Proceedings of the 1998 Conference on Superconducting and Related Oxides: Physics and Nanoengineering III - San Diego, CA, USA Duration: Jul 20 1998 → Jul 24 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Applied Mathematics
Electrical and Electronic Engineering
Computer Science Applications

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10.1117/12.335874

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title = "Step-flow growth of perovskite PbTiO3 thin films epitaxially grown on a miscut SrTiO3 substrate",

abstract = "Continuous single crystal (001)PbTiO3 thin films under a step-flow growth mode were epitaxially grown on the miscut (001)SrTiO3 substrate with miscut angle of 1.7°. A planar magnetron sputtering system was used for the epitaxial growth. The film thickness was ranged from 5 to 250 nm. The surface of the sputtered PbTiO3 thin films comprised periodic striped patterns with step lines and atomically flat terraces. The typical step height and terrace width were 3 nm and 200 nm, respectively. The partial oxygen pressure during sputtering deposition affected the stability of the step-flow growth mode. Lower partial oxygen pressure stabilized the step-flow growth mode resulting in a layer growth. The PT thin films include the stress due to the tetragonal lattice deformation.",

author = "Kiyotaka Wasa and Yoko Haneda and Toshifumi Sato and Hideaki Adachi and Isaku Kanno and Schlom, {Darrell G.} and S. Trolier-McKinstry and Qing Gang and Chang-Beom",

year = "1998",

doi = "10.1117/12.335874",

language = "English (US)",

volume = "3481",

pages = "182--189",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1998 Conference on Superconducting and Related Oxides: Physics and Nanoengineering III ; Conference date: 20-07-1998 Through 24-07-1998",

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TY - JOUR

T1 - Step-flow growth of perovskite PbTiO3 thin films epitaxially grown on a miscut SrTiO3 substrate

AU - Wasa, Kiyotaka

AU - Haneda, Yoko

AU - Sato, Toshifumi

AU - Adachi, Hideaki

AU - Kanno, Isaku

AU - Schlom, Darrell G.

AU - Trolier-McKinstry, S.

AU - Gang, Qing

AU - Chang-Beom,

PY - 1998

Y1 - 1998

N2 - Continuous single crystal (001)PbTiO3 thin films under a step-flow growth mode were epitaxially grown on the miscut (001)SrTiO3 substrate with miscut angle of 1.7°. A planar magnetron sputtering system was used for the epitaxial growth. The film thickness was ranged from 5 to 250 nm. The surface of the sputtered PbTiO3 thin films comprised periodic striped patterns with step lines and atomically flat terraces. The typical step height and terrace width were 3 nm and 200 nm, respectively. The partial oxygen pressure during sputtering deposition affected the stability of the step-flow growth mode. Lower partial oxygen pressure stabilized the step-flow growth mode resulting in a layer growth. The PT thin films include the stress due to the tetragonal lattice deformation.

AB - Continuous single crystal (001)PbTiO3 thin films under a step-flow growth mode were epitaxially grown on the miscut (001)SrTiO3 substrate with miscut angle of 1.7°. A planar magnetron sputtering system was used for the epitaxial growth. The film thickness was ranged from 5 to 250 nm. The surface of the sputtered PbTiO3 thin films comprised periodic striped patterns with step lines and atomically flat terraces. The typical step height and terrace width were 3 nm and 200 nm, respectively. The partial oxygen pressure during sputtering deposition affected the stability of the step-flow growth mode. Lower partial oxygen pressure stabilized the step-flow growth mode resulting in a layer growth. The PT thin films include the stress due to the tetragonal lattice deformation.

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EP - 189

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1998 Conference on Superconducting and Related Oxides: Physics and Nanoengineering III

Y2 - 20 July 1998 through 24 July 1998

ER -

Step-flow growth of perovskite PbTiO₃ thin films epitaxially grown on a miscut SrTiO₃ substrate

Abstract

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