Abstract
Continuous single crystal (001)PbTiO3 thin films under a step-flow growth mode were epitaxially grown on the miscut (001)SrTiO3 substrate with miscut angle of 1.7°. A planar magnetron sputtering system was used for the epitaxial growth. The film thickness was ranged from 5 to 250 nm. The surface of the sputtered PbTiO3 thin films comprised periodic striped patterns with step lines and atomically flat terraces. The typical step height and terrace width were 3 nm and 200 nm, respectively. The partial oxygen pressure during sputtering deposition affected the stability of the step-flow growth mode. Lower partial oxygen pressure stabilized the step-flow growth mode resulting in a layer growth. The PT thin films include the stress due to the tetragonal lattice deformation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 182-189 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3481 |
| DOIs | |
| State | Published - 1998 |
| Event | Proceedings of the 1998 Conference on Superconducting and Related Oxides: Physics and Nanoengineering III - San Diego, CA, USA Duration: Jul 20 1998 → Jul 24 1998 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Applied Mathematics
- Electrical and Electronic Engineering
- Computer Science Applications
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