TY - JOUR
T1 - Strain-Activated Stimulated Emission from Multilayer MoSe2 in a Narrow Operation Window
AU - Lin, Yuankun
AU - Hurley, Noah
AU - Kamau, Steve
AU - Hathaway, Evan
AU - Jiang, Yan
AU - Rodriguez, Roberto Gonzalez
AU - Varghese, Sinto
AU - Krylyuk, Sergiy
AU - Davydov, Albert V.
AU - Wang, Yuanxi
AU - Kaul, Anupama
AU - Cui, Jingbiao
N1 - Publisher Copyright:
© 2023 Wiley-VCH GmbH.
PY - 2024/2
Y1 - 2024/2
N2 - Herein, photoluminescence (PL) and fluorescence lifetime imaging (FLIM) in multilayer MoSe2 are studied. Strain-activated stimulated emission via defect levels in multilayer MoSe2 under laser excitation is observed, for the first time in defects of transition metal dichalcogenides. The stimulated emission is indicated by a threshold behavior of PL emission intensity with respect to laser intensity, strong polarization effects, achieved population inversion with a difference in lifetimes of two competing excited states, and localization of the stimulated emission zone as observed in FLIM. The presented results not only demonstrate strain-activated stimulated emission and highlight the necessity of strain engineering in tailoring 2D layered materials for optoelectronic applications, but also shed light on the design of stimulated emission in transition metal dichalcogenide's defects to tailor for potential single-photon emission behavior.
AB - Herein, photoluminescence (PL) and fluorescence lifetime imaging (FLIM) in multilayer MoSe2 are studied. Strain-activated stimulated emission via defect levels in multilayer MoSe2 under laser excitation is observed, for the first time in defects of transition metal dichalcogenides. The stimulated emission is indicated by a threshold behavior of PL emission intensity with respect to laser intensity, strong polarization effects, achieved population inversion with a difference in lifetimes of two competing excited states, and localization of the stimulated emission zone as observed in FLIM. The presented results not only demonstrate strain-activated stimulated emission and highlight the necessity of strain engineering in tailoring 2D layered materials for optoelectronic applications, but also shed light on the design of stimulated emission in transition metal dichalcogenide's defects to tailor for potential single-photon emission behavior.
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U2 - 10.1002/pssr.202300343
DO - 10.1002/pssr.202300343
M3 - Article
AN - SCOPUS:85173440563
SN - 1862-6254
VL - 18
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 2
M1 - 2300343
ER -