Strain Control of Domain Structures in Ferroelectric Thin Films: Applications of Phase-Field Method

Jian Jun Wang, Long Qing Chen

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Scopus citations

Abstract

Ferroelectric thin films have potential applications in many devices such as memories, microwaves, transduction sensors, actuators, photovoltaics, etc. The mesoscale domain structures and thus properties of ferroelectric thin films depend crucially on the amount of strain imposed upon by the underlying substrates. Phase-field method has been extensively applied to understanding the underlying physics of the experimentally observed domain structures and predicting their responses to external electrical, mechanical, thermal, and chemical stimuli. In this chapter, the fundamentals of the thin-film phase-field method and its applications in predicting the effects of strains on the phase transitions, domain structures, and the domain switching are reviewed. The prospect of using phase-field method in microstructure design and property optimization for ferroelectric thin films is discussed.

Original languageEnglish (US)
Title of host publicationHandbook of Materials Modeling
Subtitle of host publicationApplications: Current and Emerging Materials, Second Edition
PublisherSpringer International Publishing
Pages1213-1230
Number of pages18
ISBN (Electronic)9783319446806
ISBN (Print)9783319446790
DOIs
StatePublished - Jan 1 2020

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy
  • General Engineering
  • General Chemistry

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