Strain Control of Domain Structures in Ferroelectric Thin Films: Applications of Phase-Field Method

Ferroelectric thin films have potential applications in many devices such as memories, microwaves, transduction sensors, actuators, photovoltaics, etc. The mesoscale domain structures and thus properties of ferroelectric thin films depend crucially on the amount of strain imposed upon by the underlying substrates. Phase-field method has been extensively applied to understanding the underlying physics of the experimentally observed domain structures and predicting their responses to external electrical, mechanical, thermal, and chemical stimuli. In this chapter, the fundamentals of the thin-film phase-field method and its applications in predicting the effects of strains on the phase transitions, domain structures, and the domain switching are reviewed. The prospect of using phase-field method in microstructure design and property optimization for ferroelectric thin films is discussed.