Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors

F. Deng; Q. Z. Liu; L. S. Yu; Z. F. Guan; S. S. Lau; J. M. Redwing; J. Geisz; T. F. Kuech

doi:10.1063/1.360966

Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors

F. Deng, Q. Z. Liu, L. S. Yu, Z. F. Guan, S. S. Lau, J. M. Redwing, J. Geisz, T. F. Kuech

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Abstract

The effect of strain-induced band-gap modulation has been studied in a GaAs/AlGaAs multiple-quantum-well structure with the wells located at various depths in the structure. The energy change in the quantum wells was calculated based on simple elasticity theory and measured using photoluminescence on the structure where a thin-film stressor array was deposited. Metallic thin-film stressors were made by conventional thin-film deposition techniques followed by photolithography. It was found that the elasticity theory describes the energy changes reasonably well in comparison with the experimental results. For stressor layers that react with the heterojunction structure, the situation was more complex and requires more detailed analysis. Based on the calculated and experimental results it appears possible to fabricate quantum wire with lateral dimensions of less than 100 nm using thin-film technology and e-beam lithography.

Original language	English (US)
Pages (from-to)	1763-1771
Number of pages	9
Journal	Journal of Applied Physics
Volume	79
Issue number	3
DOIs	https://doi.org/10.1063/1.360966
State	Published - Feb 1 1996

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.360966

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title = "Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors",

abstract = "The effect of strain-induced band-gap modulation has been studied in a GaAs/AlGaAs multiple-quantum-well structure with the wells located at various depths in the structure. The energy change in the quantum wells was calculated based on simple elasticity theory and measured using photoluminescence on the structure where a thin-film stressor array was deposited. Metallic thin-film stressors were made by conventional thin-film deposition techniques followed by photolithography. It was found that the elasticity theory describes the energy changes reasonably well in comparison with the experimental results. For stressor layers that react with the heterojunction structure, the situation was more complex and requires more detailed analysis. Based on the calculated and experimental results it appears possible to fabricate quantum wire with lateral dimensions of less than 100 nm using thin-film technology and e-beam lithography.",

author = "F. Deng and Liu, {Q. Z.} and Yu, {L. S.} and Guan, {Z. F.} and Lau, {S. S.} and Redwing, {J. M.} and J. Geisz and Kuech, {T. F.}",

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T1 - Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors

AU - Deng, F.

AU - Liu, Q. Z.

AU - Yu, L. S.

AU - Guan, Z. F.

AU - Lau, S. S.

AU - Redwing, J. M.

AU - Geisz, J.

AU - Kuech, T. F.

PY - 1996/2/1

Y1 - 1996/2/1

N2 - The effect of strain-induced band-gap modulation has been studied in a GaAs/AlGaAs multiple-quantum-well structure with the wells located at various depths in the structure. The energy change in the quantum wells was calculated based on simple elasticity theory and measured using photoluminescence on the structure where a thin-film stressor array was deposited. Metallic thin-film stressors were made by conventional thin-film deposition techniques followed by photolithography. It was found that the elasticity theory describes the energy changes reasonably well in comparison with the experimental results. For stressor layers that react with the heterojunction structure, the situation was more complex and requires more detailed analysis. Based on the calculated and experimental results it appears possible to fabricate quantum wire with lateral dimensions of less than 100 nm using thin-film technology and e-beam lithography.

AB - The effect of strain-induced band-gap modulation has been studied in a GaAs/AlGaAs multiple-quantum-well structure with the wells located at various depths in the structure. The energy change in the quantum wells was calculated based on simple elasticity theory and measured using photoluminescence on the structure where a thin-film stressor array was deposited. Metallic thin-film stressors were made by conventional thin-film deposition techniques followed by photolithography. It was found that the elasticity theory describes the energy changes reasonably well in comparison with the experimental results. For stressor layers that react with the heterojunction structure, the situation was more complex and requires more detailed analysis. Based on the calculated and experimental results it appears possible to fabricate quantum wire with lateral dimensions of less than 100 nm using thin-film technology and e-beam lithography.

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Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors

Abstract

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