Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system

J. L. Gray; R. Hull; N. Singh; D. M. Elzey; J. A. Floro; P. Kumar; T. L. Pernell; J. C. Bean; T. Vandervelde

Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system

J. L. Gray, R. Hull, N. Singh, D. M. Elzey, J. A. Floro, P. Kumar, T. L. Pernell, J. C. Bean, T. Vandervelde

Materials Characterization Lab

Research output: Contribution to journal › Conference article › peer-review

Abstract

Epitaxial growth of Si_0.7Ge_0.3/Si(001) under kinetically limited conditions results in the initial formation of shallow pyramidal pits with {501} facets, similar to an inverted "hut" structure. As growth is continued, the pit edges become decorated by islands that elongate to form a continuous wall surrounding each pit. These "quantum fortress" structures reach a maximum stable size. The quantum fortress morphology becomes de-stabilized by further growth causing the introduction of dislocations and also by annealing at temperatures above the growth temperature. The surface morphology has been characterized using both atomic force microscopy and transmission electron microscopy.

Original language	English (US)
Pages (from-to)	243-246
Number of pages	4
Journal	Design and Nature
Volume	6
State	Published - 2004
Event	Design and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece Duration: Jun 28 2004 → Jun 30 2004

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@article{402ad59b7108465ca1f2403ea513f84e,

title = "Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system",

abstract = "Epitaxial growth of Si0.7Ge0.3/Si(001) under kinetically limited conditions results in the initial formation of shallow pyramidal pits with {501} facets, similar to an inverted {"}hut{"} structure. As growth is continued, the pit edges become decorated by islands that elongate to form a continuous wall surrounding each pit. These {"}quantum fortress{"} structures reach a maximum stable size. The quantum fortress morphology becomes de-stabilized by further growth causing the introduction of dislocations and also by annealing at temperatures above the growth temperature. The surface morphology has been characterized using both atomic force microscopy and transmission electron microscopy.",

author = "Gray, {J. L.} and R. Hull and N. Singh and Elzey, {D. M.} and Floro, {J. A.} and P. Kumar and Pernell, {T. L.} and Bean, {J. C.} and T. Vandervelde",

year = "2004",

language = "English (US)",

volume = "6",

pages = "243--246",

journal = "Design and Nature",

issn = "1478-0585",

publisher = "WIT Press",

note = "Design and Nature II: Comparing Design in Nature with Science and Engineering ; Conference date: 28-06-2004 Through 30-06-2004",

}

TY - JOUR

T1 - Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system

AU - Gray, J. L.

AU - Hull, R.

AU - Singh, N.

AU - Elzey, D. M.

AU - Floro, J. A.

AU - Kumar, P.

AU - Pernell, T. L.

AU - Bean, J. C.

AU - Vandervelde, T.

PY - 2004

Y1 - 2004

N2 - Epitaxial growth of Si0.7Ge0.3/Si(001) under kinetically limited conditions results in the initial formation of shallow pyramidal pits with {501} facets, similar to an inverted "hut" structure. As growth is continued, the pit edges become decorated by islands that elongate to form a continuous wall surrounding each pit. These "quantum fortress" structures reach a maximum stable size. The quantum fortress morphology becomes de-stabilized by further growth causing the introduction of dislocations and also by annealing at temperatures above the growth temperature. The surface morphology has been characterized using both atomic force microscopy and transmission electron microscopy.

AB - Epitaxial growth of Si0.7Ge0.3/Si(001) under kinetically limited conditions results in the initial formation of shallow pyramidal pits with {501} facets, similar to an inverted "hut" structure. As growth is continued, the pit edges become decorated by islands that elongate to form a continuous wall surrounding each pit. These "quantum fortress" structures reach a maximum stable size. The quantum fortress morphology becomes de-stabilized by further growth causing the introduction of dislocations and also by annealing at temperatures above the growth temperature. The surface morphology has been characterized using both atomic force microscopy and transmission electron microscopy.

UR - http://www.scopus.com/inward/record.url?scp=7744247037&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=7744247037&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:7744247037

SN - 1478-0585

VL - 6

SP - 243

EP - 246

JO - Design and Nature

JF - Design and Nature

T2 - Design and Nature II: Comparing Design in Nature with Science and Engineering

Y2 - 28 June 2004 through 30 June 2004

ER -

Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system

Abstract

All Science Journal Classification (ASJC) codes

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