Strain-induced large low-field magnetoresistance in Pr0.67Sr0.33MnO3 ultrathin films

H. S. Wang; Qi Li

doi:10.1063/1.122461

Strain-induced large low-field magnetoresistance in Pr_0.67Sr_0.33MnO₃ ultrathin films

H. S. Wang, Qi Li

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104 Scopus citations

Abstract

We report magnetoresistance (MR) measurements in very thin Pr_0.67Sr_0.33MnO₃ films (5-15 nm) grown on LaAlO₃ (001) substrates. The films are under compressive strain imposed by the lattice mismatch with the substrate. The MR ratio [R(H)-R₀]/R₀ is ∼92% at H=800Oe and T=70K when the magnetic field is applied perpendicular to the film plane and is much smaller when the magnetic field is parallel to the film plane. We suggest that the large low-field MR is due to strain-induced magnetic anisotropy and spin-dependent scattering at domain boundaries.

Original language	English (US)
Pages (from-to)	2360-2362
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	16
DOIs	https://doi.org/10.1063/1.122461
State	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.122461

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title = "Strain-induced large low-field magnetoresistance in Pr0.67Sr0.33MnO3 ultrathin films",

abstract = "We report magnetoresistance (MR) measurements in very thin Pr0.67Sr0.33MnO3 films (5-15 nm) grown on LaAlO3 (001) substrates. The films are under compressive strain imposed by the lattice mismatch with the substrate. The MR ratio [R(H)-R0]/R0 is ∼92% at H=800Oe and T=70K when the magnetic field is applied perpendicular to the film plane and is much smaller when the magnetic field is parallel to the film plane. We suggest that the large low-field MR is due to strain-induced magnetic anisotropy and spin-dependent scattering at domain boundaries.",

author = "Wang, {H. S.} and Qi Li",

year = "1998",

doi = "10.1063/1.122461",

language = "English (US)",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Strain-induced large low-field magnetoresistance in Pr0.67Sr0.33MnO3 ultrathin films

AU - Wang, H. S.

AU - Li, Qi

PY - 1998

Y1 - 1998

N2 - We report magnetoresistance (MR) measurements in very thin Pr0.67Sr0.33MnO3 films (5-15 nm) grown on LaAlO3 (001) substrates. The films are under compressive strain imposed by the lattice mismatch with the substrate. The MR ratio [R(H)-R0]/R0 is ∼92% at H=800Oe and T=70K when the magnetic field is applied perpendicular to the film plane and is much smaller when the magnetic field is parallel to the film plane. We suggest that the large low-field MR is due to strain-induced magnetic anisotropy and spin-dependent scattering at domain boundaries.

AB - We report magnetoresistance (MR) measurements in very thin Pr0.67Sr0.33MnO3 films (5-15 nm) grown on LaAlO3 (001) substrates. The films are under compressive strain imposed by the lattice mismatch with the substrate. The MR ratio [R(H)-R0]/R0 is ∼92% at H=800Oe and T=70K when the magnetic field is applied perpendicular to the film plane and is much smaller when the magnetic field is parallel to the film plane. We suggest that the large low-field MR is due to strain-induced magnetic anisotropy and spin-dependent scattering at domain boundaries.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Strain-induced large low-field magnetoresistance in Pr_0.67Sr_0.33MnO₃ ultrathin films

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