Abstract
We report the temperature dependence of the magnetic anisotropy in both compressive and tensile strained films of (Formula presented) (PSMO). Compressive strain induced by growth on (Formula presented) (LAO) substrates results in a spontaneous out-of-plane magnetization, while tensile strain (grown on (Formula presented) results in in-plane magnetization. The coefficient of linear proportionality between the magnetic anisotropy energy and the tetragonal strain for both compressive and tensile strained PSMO films is larger than that found previously in strained (Formula presented) films. From the data, we estimate a 20 unit-cell magnetic domain wall width for PSMO/LAO. Scattering from such a narrow domain wall could produce a potentially significant contribution to the resistivity.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 501-505 |
| Number of pages | 5 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 61 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2000 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics