Strain-mediated voltage control of magnetism in multiferroic Ni 77Fe23/Pb(Mg1/3Nb2/3) 0.7Ti0.3O3 heterostructure

Ya Gao; Jiamian Hu; Li Shu; C. W. Nan

doi:10.1063/1.4870975

Strain-mediated voltage control of magnetism in multiferroic Ni ₇₇Fe₂₃/Pb(Mg_1/3Nb_2/3) _0.7Ti_0.3O₃ heterostructure

Ya Gao, Jiamian Hu, Li Shu, C. W. Nan

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Using voltage-modified anisotropic magnetoresistance (AMR) measurement, we demonstrated a strain-mediated voltage control of magnetism in multiferroic Ni₇₇Fe₂₃(NiFe, 10 nm)/Pb (Mg_1/3Nb _2/3)_0.7Ti_0.3O₃(PMN-PT, bulk crystal) heterostructure, even assuming a very small magnetostriction (∼0.3 ppm) for the NiFe film which has a composition close to bulk permalloy (Ni ₈₀Fe₂₀). Influence of the magnitude of the rotating magnetic field used for AMR tests is studied. Combined AMR and theoretical analysis indicate the voltage-modified change in the magnetoresistance of the NiFe film arises from the reduced free energy barrier between the magnetic easy axis and hard axis via voltage-induced strains in the PMN-PT.

Original language	English (US)
Article number	142908
Journal	Applied Physics Letters
Volume	104
Issue number	14
DOIs	https://doi.org/10.1063/1.4870975
State	Published - Apr 7 2014

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4870975

Cite this

@article{981eabc91c4d4bbfaee66ab27ee17f31,

title = "Strain-mediated voltage control of magnetism in multiferroic Ni 77Fe23/Pb(Mg1/3Nb2/3) 0.7Ti0.3O3 heterostructure",

abstract = "Using voltage-modified anisotropic magnetoresistance (AMR) measurement, we demonstrated a strain-mediated voltage control of magnetism in multiferroic Ni77Fe23(NiFe, 10 nm)/Pb (Mg1/3Nb 2/3)0.7Ti0.3O3(PMN-PT, bulk crystal) heterostructure, even assuming a very small magnetostriction (∼0.3 ppm) for the NiFe film which has a composition close to bulk permalloy (Ni 80Fe20). Influence of the magnitude of the rotating magnetic field used for AMR tests is studied. Combined AMR and theoretical analysis indicate the voltage-modified change in the magnetoresistance of the NiFe film arises from the reduced free energy barrier between the magnetic easy axis and hard axis via voltage-induced strains in the PMN-PT.",

author = "Ya Gao and Jiamian Hu and Li Shu and Nan, {C. W.}",

year = "2014",

month = apr,

day = "7",

doi = "10.1063/1.4870975",

language = "English (US)",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Strain-mediated voltage control of magnetism in multiferroic Ni 77Fe23/Pb(Mg1/3Nb2/3) 0.7Ti0.3O3 heterostructure

AU - Gao, Ya

AU - Hu, Jiamian

AU - Shu, Li

AU - Nan, C. W.

PY - 2014/4/7

Y1 - 2014/4/7

N2 - Using voltage-modified anisotropic magnetoresistance (AMR) measurement, we demonstrated a strain-mediated voltage control of magnetism in multiferroic Ni77Fe23(NiFe, 10 nm)/Pb (Mg1/3Nb 2/3)0.7Ti0.3O3(PMN-PT, bulk crystal) heterostructure, even assuming a very small magnetostriction (∼0.3 ppm) for the NiFe film which has a composition close to bulk permalloy (Ni 80Fe20). Influence of the magnitude of the rotating magnetic field used for AMR tests is studied. Combined AMR and theoretical analysis indicate the voltage-modified change in the magnetoresistance of the NiFe film arises from the reduced free energy barrier between the magnetic easy axis and hard axis via voltage-induced strains in the PMN-PT.

AB - Using voltage-modified anisotropic magnetoresistance (AMR) measurement, we demonstrated a strain-mediated voltage control of magnetism in multiferroic Ni77Fe23(NiFe, 10 nm)/Pb (Mg1/3Nb 2/3)0.7Ti0.3O3(PMN-PT, bulk crystal) heterostructure, even assuming a very small magnetostriction (∼0.3 ppm) for the NiFe film which has a composition close to bulk permalloy (Ni 80Fe20). Influence of the magnitude of the rotating magnetic field used for AMR tests is studied. Combined AMR and theoretical analysis indicate the voltage-modified change in the magnetoresistance of the NiFe film arises from the reduced free energy barrier between the magnetic easy axis and hard axis via voltage-induced strains in the PMN-PT.

UR - http://www.scopus.com/inward/record.url?scp=84898999513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898999513&partnerID=8YFLogxK

U2 - 10.1063/1.4870975

DO - 10.1063/1.4870975

M3 - Article

AN - SCOPUS:84898999513

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142908

ER -

Strain-mediated voltage control of magnetism in multiferroic Ni ₇₇Fe₂₃/Pb(Mg_1/3Nb_2/3) _0.7Ti_0.3O₃ heterostructure

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this