Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO3 thin films

H. W. Jang, S. H. Baek, D. Ortiz, C. M. Folkman, R. R. Das, Y. H. Chu, J. X. Zhang, V. Vaithyanathan, S. Choudhury, Y. B. Chen, X. Q. Pan, D. G. Schlom, L. Q. Chen, R. Ramesh, C. B. Eom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the strain dependence of remanent polarization and coercive field of epitaxial (001)p BiFeO3 films. Our measurements reveal that the large spontanoues polarization of BiFeO3 is indeed intrinsic, the remanent polarization of (001)pBiFeO3 thin films has a strong strain dependence, even stronger than (001) PbTiO3 films, and the coercive field of BiFeO3 films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001) p BiFeO3 membranes allows us to achieve a fatigue-free switching behavior to 1010 cycles. This experimental result strongly suggests that epitaxial (001)p BiFeO3 thin films are very promising materials for non-volatile memories and magnetoelectric devices.

Original languageEnglish (US)
Title of host publication17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOIs
StatePublished - 2008
Event17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States
Duration: Feb 23 2008Feb 28 2008

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics
Volume3

Other

Other17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Country/TerritoryUnited States
CitySanta Fe, NM
Period2/23/082/28/08

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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