Stranski-Krastanow growth of germanium on silicon nanowires

Ling Pan; Kok Keong Lew; Joan M. Redwing; Elizabeth C. Dickey

doi:10.1021/nl050605z

Stranski-Krastanow growth of germanium on silicon nanowires

Ling Pan, Kok Keong Lew, Joan M. Redwing, Elizabeth C. Dickey

Research output: Contribution to journal › Article › peer-review

94 Scopus citations

Abstract

There have been extensive studies of germanium (Ge) grown on planar silicon (Si) substrates by the Stranski-Krastanow (S-K) mechanism. In this study, we present S-K growth of Ge on Si nanowires. The Si nanowires were grown at 500 °C by a vapor-liquid-solid (VLS) method, using silane (SiH ₄) as the gaseous precursor. By switching the gas source from SiH ₄ to germane (GeH ₄) during the growth and maintaining the growth conditions, epitaxial Ge islands deposited on the outer surface of the initially formed Si nanowires. Transmission electron microscopy (TEM), scanning TEM, and energy-dispersive X-ray spectroscopy techniques were utilized to identify the thin wetting layer and the three-dimensional Ge islands formed around the Si core nanowires. Cross-sectional TEM verified the surface faceting of the Si core nanowires as well as the Ge islands.

Original language	English (US)
Pages (from-to)	1081-1085
Number of pages	5
Journal	Nano letters
Volume	5
Issue number	6
DOIs	https://doi.org/10.1021/nl050605z
State	Published - Jun 2005

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl050605z

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title = "Stranski-Krastanow growth of germanium on silicon nanowires",

abstract = "There have been extensive studies of germanium (Ge) grown on planar silicon (Si) substrates by the Stranski-Krastanow (S-K) mechanism. In this study, we present S-K growth of Ge on Si nanowires. The Si nanowires were grown at 500 °C by a vapor-liquid-solid (VLS) method, using silane (SiH 4) as the gaseous precursor. By switching the gas source from SiH 4 to germane (GeH 4) during the growth and maintaining the growth conditions, epitaxial Ge islands deposited on the outer surface of the initially formed Si nanowires. Transmission electron microscopy (TEM), scanning TEM, and energy-dispersive X-ray spectroscopy techniques were utilized to identify the thin wetting layer and the three-dimensional Ge islands formed around the Si core nanowires. Cross-sectional TEM verified the surface faceting of the Si core nanowires as well as the Ge islands.",

author = "Ling Pan and Lew, {Kok Keong} and Redwing, {Joan M.} and Dickey, {Elizabeth C.}",

year = "2005",

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language = "English (US)",

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journal = "Nano letters",

issn = "1530-6984",

publisher = "American Chemical Society",

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T1 - Stranski-Krastanow growth of germanium on silicon nanowires

AU - Pan, Ling

AU - Lew, Kok Keong

AU - Redwing, Joan M.

AU - Dickey, Elizabeth C.

PY - 2005/6

Y1 - 2005/6

N2 - There have been extensive studies of germanium (Ge) grown on planar silicon (Si) substrates by the Stranski-Krastanow (S-K) mechanism. In this study, we present S-K growth of Ge on Si nanowires. The Si nanowires were grown at 500 °C by a vapor-liquid-solid (VLS) method, using silane (SiH 4) as the gaseous precursor. By switching the gas source from SiH 4 to germane (GeH 4) during the growth and maintaining the growth conditions, epitaxial Ge islands deposited on the outer surface of the initially formed Si nanowires. Transmission electron microscopy (TEM), scanning TEM, and energy-dispersive X-ray spectroscopy techniques were utilized to identify the thin wetting layer and the three-dimensional Ge islands formed around the Si core nanowires. Cross-sectional TEM verified the surface faceting of the Si core nanowires as well as the Ge islands.

AB - There have been extensive studies of germanium (Ge) grown on planar silicon (Si) substrates by the Stranski-Krastanow (S-K) mechanism. In this study, we present S-K growth of Ge on Si nanowires. The Si nanowires were grown at 500 °C by a vapor-liquid-solid (VLS) method, using silane (SiH 4) as the gaseous precursor. By switching the gas source from SiH 4 to germane (GeH 4) during the growth and maintaining the growth conditions, epitaxial Ge islands deposited on the outer surface of the initially formed Si nanowires. Transmission electron microscopy (TEM), scanning TEM, and energy-dispersive X-ray spectroscopy techniques were utilized to identify the thin wetting layer and the three-dimensional Ge islands formed around the Si core nanowires. Cross-sectional TEM verified the surface faceting of the Si core nanowires as well as the Ge islands.

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JO - Nano letters

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Stranski-Krastanow growth of germanium on silicon nanowires

Abstract

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