Stress and microstructure evolution in compositionally graded Al _1-xGa_xN buffer layers for GaN growth on Si

Keyphrases

• Microstructure Evolution 100%
• Buffer Layer 100%
• GaN Growth 100%
• Stress Evolution 100%
• Compositionally Graded 100%
• Compressive Stress 80%
• Stress Transition 40%
• Microstructure 20%
• Si Substrate 20%
• Cross-sectional Transmission Electron Microscopy 20%
• Tensile Stress 20%
• Varying Thickness 20%
• Threading Dislocation 20%
• In-situ Test 20%
• X-ray Energy Dispersive Spectrometry 20%
• Threading Dislocation Density 20%
• Dislocation Annihilation 20%

Engineering

• Microstructure Evolution 100%
• Buffer Layer 100%
• Compressive Stress 80%
• Tensiles 40%
• Threading Dislocation 40%
• Transmissions 20%
• Energy Engineering 20%
• Microstructure 20%
• Si Substrate 20%
• Tensile Stress σ 20%
• Dislocation Density 20%
• In Situ Stress Measurement 20%

Material Science

• Buffer Layer 100%
• Density 20%
• Transmission Electron Microscopy 20%
• Ultimate Tensile Strength 20%
• In Situ Stress Measurement 20%