Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

J. M. Redwing; J. D. Acord; I. Manning; S. Raghavan; X. Weng; E. C. Dickey; D. W. Snyder

doi:10.1109/ISDRS.2007.4422504

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

J. M. Redwing, J. D. Acord, I. Manning, S. Raghavan, X. Weng, E. C. Dickey, D. W. Snyder

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422504
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: Dec 12 2007 → Dec 14 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 12/14/07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/ISDRS.2007.4422504

Cite this

Redwing, J. M., Acord, J. D., Manning, I., Raghavan, S., Weng, X., Dickey, E. C., & Snyder, D. W. (2007). Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides. In 2007 International Semiconductor Device Research Symposium, ISDRS Article 4422504 (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422504

@inproceedings{45990c9bbe3341c09454a777c617dcef,

title = "Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides",

author = "Redwing, {J. M.} and Acord, {J. D.} and I. Manning and S. Raghavan and X. Weng and Dickey, {E. C.} and Snyder, {D. W.}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422504",

language = "English (US)",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Redwing, JM, Acord, JD, Manning, I, Raghavan, S, Weng, X, Dickey, EC & Snyder, DW 2007, Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422504, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422504

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides. / Redwing, J. M.; Acord, J. D.; Manning, I. et al.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422504 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

AU - Redwing, J. M.

AU - Acord, J. D.

AU - Manning, I.

AU - Raghavan, S.

AU - Weng, X.

AU - Dickey, E. C.

AU - Snyder, D. W.

PY - 2007

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U2 - 10.1109/ISDRS.2007.4422504

DO - 10.1109/ISDRS.2007.4422504

M3 - Conference contribution

AN - SCOPUS:44949100381

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

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Other

All Science Journal Classification (ASJC) codes

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