Skip to main navigation Skip to search Skip to main content

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

  • J. M. Redwing
  • , J. D. Acord
  • , I. Manning
  • , S. Raghavan
  • , X. Weng
  • , E. C. Dickey
  • , D. W. Snyder

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
StatePublished - 2007
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: Dec 12 2007Dec 14 2007

Publication series

Name2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
Country/TerritoryUnited States
CityCollege Park, MD
Period12/12/0712/14/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this