Abstract
We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12μm) using a two-layer system consisting of heavily-doped silicon and a thin high-index germanium dielectric layer. We demonstrate spectral control of the absorption resonance by varying the thickness of the dielectric layer. The absorption resonance is shown to be largely polarization-independent and angle-invariant. Upon heating, we observe selective thermal emission from our materials. Experimental data is compared to an analytical model of our structures with strong agreement.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 9113-9122 |
| Number of pages | 10 |
| Journal | Optics Express |
| Volume | 21 |
| Issue number | 7 |
| DOIs | |
| State | Published - Apr 8 2013 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics