Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films

Wanlin Zhu, John Hayden, Fan He, Jung In Yang, Pannawit Tipsawat, Mohammad D. Hossain, Jon Paul Maria, Susan Trolier-McKinstry

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

This manuscript reports the temperature dependence of ferroelectric switching in Al0.84Sc0.16N, Al0.93B0.07N, and AlN thin films. Polarization reversal is demonstrated in all compositions and is strongly temperature dependent. Between room temperature and 300 °C, the coercive field drops by almost 50% in all samples, while there was very small temperature dependence of the remanent polarization value. Over this same temperature range, the relative permittivity increased between 5% and 10%. Polarization reversal was confirmed by piezoelectric coefficient analysis and chemical etching. Applying intrinsic/homogeneous switching models produces nonphysical fits, while models based on thermal activation suggest that switching is regulated by a distribution of pinning sites or nucleation barriers with an average activation energy near 28 meV.

Original languageEnglish (US)
Article number062901
JournalApplied Physics Letters
Volume119
Issue number6
DOIs
StatePublished - Aug 9 2021

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films'. Together they form a unique fingerprint.

Cite this