Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides

Tsvetanka Zheleva; Igor Levin; Dan Habersat; Aivars Lelis; Morgen Dautrich; Patrick Lenahan

Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides

Tsvetanka Zheleva, Igor Levin, Dan Habersat, Aivars Lelis, Morgen Dautrich, Patrick Lenahan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2005 International Semiconductor Device Research Symposium
Pages	139-140
Number of pages	2
State	Published - 2005
Event	2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States Duration: Dec 7 2005 → Dec 9 2005

Publication series

Name	2005 International Semiconductor Device Research Symposium
Volume	2005

Other

Other	2005 International Semiconductor Device Research Symposium
Country/Territory	United States
City	Bethesda, MD
Period	12/7/05 → 12/9/05

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@inproceedings{2eb33bb3756440f69289f9a14d2a173b,

title = "Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides",

author = "Tsvetanka Zheleva and Igor Levin and Dan Habersat and Aivars Lelis and Morgen Dautrich and Patrick Lenahan",

year = "2005",

language = "English (US)",

isbn = "1424400848",

series = "2005 International Semiconductor Device Research Symposium",

pages = "139--140",

booktitle = "2005 International Semiconductor Device Research Symposium",

note = "2005 International Semiconductor Device Research Symposium ; Conference date: 07-12-2005 Through 09-12-2005",

}

Zheleva, T, Levin, I, Habersat, D, Lelis, A, Dautrich, M & Lenahan, P 2005, Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides. in 2005 International Semiconductor Device Research Symposium., 1596019, 2005 International Semiconductor Device Research Symposium, vol. 2005, pp. 139-140, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 12/7/05.

Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides. / Zheleva, Tsvetanka; Levin, Igor; Habersat, Dan et al.
2005 International Semiconductor Device Research Symposium. 2005. p. 139-140 1596019 (2005 International Semiconductor Device Research Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides

AU - Zheleva, Tsvetanka

AU - Levin, Igor

AU - Habersat, Dan

AU - Lelis, Aivars

AU - Dautrich, Morgen

AU - Lenahan, Patrick

PY - 2005

Y1 - 2005

UR - http://www.scopus.com/inward/record.url?scp=33847198281&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847198281&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847198281

SN - 1424400848

SN - 9781424400843

T3 - 2005 International Semiconductor Device Research Symposium

SP - 139

EP - 140

BT - 2005 International Semiconductor Device Research Symposium

T2 - 2005 International Semiconductor Device Research Symposium

Y2 - 7 December 2005 through 9 December 2005

ER -

Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides

Publication series

Other

All Science Journal Classification (ASJC) codes

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Cite this