Structural and electrical characterization of heteroepitaxial Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films

V. Bornand; S. Trolier-McKinstry

doi:10.1063/1.372441

Structural and electrical characterization of heteroepitaxial Pb[Yb_1/2Nb_1/2]O₃-PbTiO₃ thin films

V. Bornand, S. Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The pulsed laser deposition process has been used to prepare heteroepitaxial (1-x) Pb[Yb_1/2Nb_1/2]O₃-xPbTiO₃(PYbN-PT, x= 0.4,0.5) thin films on single crystalline (001)_pcSrppSrRuO₃/LaAlO₃ and (111)_pcSrRuO3/SrTiO₃ substrates (the subscript pc refers here to the pseudocubic subcell). High laser frequencies (f- 16 Hz) and 300 mTorr of background O₃/O₃ in the chamber during deposition provide stoichiometric and high crystalline quality heterostructures. Temperatures in the 560-660 °C range lead to improved microstructures as well as good dielectric and ferroelectric properties consistent with those of PYbN-PT ceramics. In particular, films show room temperature dielectric constants greater than 1300 and exhibit well-developed hysteresis loops with remanent polarizations (P_r) as high as 40-50 μCcm^-2. Results are discussed in terms of film composition and crystallinity.

Original language	English (US)
Pages (from-to)	3958-3964
Number of pages	7
Journal	Journal of Applied Physics
Volume	87
Issue number	8
DOIs	https://doi.org/10.1063/1.372441
State	Published - Apr 15 2000

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1063/1.372441

Cite this

@article{5f1c47e90ef7449e86aa56f3c0a13589,

title = "Structural and electrical characterization of heteroepitaxial Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films",

abstract = "The pulsed laser deposition process has been used to prepare heteroepitaxial (1-x) Pb[Yb1/2Nb1/2]O3-xPbTiO3(PYbN-PT, x= 0.4,0.5) thin films on single crystalline (001)pcSrppSrRuO3/LaAlO3 and (111)pcSrRuO3/SrTiO3 substrates (the subscript pc refers here to the pseudocubic subcell). High laser frequencies (f- 16 Hz) and 300 mTorr of background O3/O3 in the chamber during deposition provide stoichiometric and high crystalline quality heterostructures. Temperatures in the 560-660 °C range lead to improved microstructures as well as good dielectric and ferroelectric properties consistent with those of PYbN-PT ceramics. In particular, films show room temperature dielectric constants greater than 1300 and exhibit well-developed hysteresis loops with remanent polarizations (Pr) as high as 40-50 μCcm-2. Results are discussed in terms of film composition and crystallinity.",

author = "V. Bornand and S. Trolier-McKinstry",

year = "2000",

month = apr,

day = "15",

doi = "10.1063/1.372441",

language = "English (US)",

volume = "87",

pages = "3958--3964",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Structural and electrical characterization of heteroepitaxial Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films

AU - Bornand, V.

AU - Trolier-McKinstry, S.

PY - 2000/4/15

Y1 - 2000/4/15

N2 - The pulsed laser deposition process has been used to prepare heteroepitaxial (1-x) Pb[Yb1/2Nb1/2]O3-xPbTiO3(PYbN-PT, x= 0.4,0.5) thin films on single crystalline (001)pcSrppSrRuO3/LaAlO3 and (111)pcSrRuO3/SrTiO3 substrates (the subscript pc refers here to the pseudocubic subcell). High laser frequencies (f- 16 Hz) and 300 mTorr of background O3/O3 in the chamber during deposition provide stoichiometric and high crystalline quality heterostructures. Temperatures in the 560-660 °C range lead to improved microstructures as well as good dielectric and ferroelectric properties consistent with those of PYbN-PT ceramics. In particular, films show room temperature dielectric constants greater than 1300 and exhibit well-developed hysteresis loops with remanent polarizations (Pr) as high as 40-50 μCcm-2. Results are discussed in terms of film composition and crystallinity.

AB - The pulsed laser deposition process has been used to prepare heteroepitaxial (1-x) Pb[Yb1/2Nb1/2]O3-xPbTiO3(PYbN-PT, x= 0.4,0.5) thin films on single crystalline (001)pcSrppSrRuO3/LaAlO3 and (111)pcSrRuO3/SrTiO3 substrates (the subscript pc refers here to the pseudocubic subcell). High laser frequencies (f- 16 Hz) and 300 mTorr of background O3/O3 in the chamber during deposition provide stoichiometric and high crystalline quality heterostructures. Temperatures in the 560-660 °C range lead to improved microstructures as well as good dielectric and ferroelectric properties consistent with those of PYbN-PT ceramics. In particular, films show room temperature dielectric constants greater than 1300 and exhibit well-developed hysteresis loops with remanent polarizations (Pr) as high as 40-50 μCcm-2. Results are discussed in terms of film composition and crystallinity.

UR - http://www.scopus.com/inward/record.url?scp=0000226167&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000226167&partnerID=8YFLogxK

U2 - 10.1063/1.372441

DO - 10.1063/1.372441

M3 - Article

AN - SCOPUS:0000226167

SN - 0021-8979

VL - 87

SP - 3958

EP - 3964

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Structural and electrical characterization of heteroepitaxial Pb[Yb_1/2Nb_1/2]O₃-PbTiO₃ thin films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this