Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition

Joseph E. Brom; Yue Ke; Renzhong Du; Dongjin Won; Xiaojun Weng; Kalissa Andre; Jarod C. Gagnon; Suzanne E. Mohney; Qi Li; Ke Chen; X. X. Xi; Joan M. Redwing

doi:10.1063/1.4704680

Structural and electrical properties of epitaxial Bi ₂Se ₃ thin films grown by hybrid physical-chemical vapor deposition

Joseph E. Brom, Yue Ke, Renzhong Du, Dongjin Won, Xiaojun Weng, Kalissa Andre, Jarod C. Gagnon, Suzanne E. Mohney, Qi Li, Ke Chen, X. X. Xi, Joan M. Redwing

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Abstract

We report the epitaxial growth of Bi ₂Se ₃ thin films on (0001) Al ₂O ₃ substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi ₂Se ₃ films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 ¹⁸cm ^-3 and a mobility of 900 cm ²/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi ₂Se ₃ films for topological insulator studies.

Original language	English (US)
Article number	162110
Journal	Applied Physics Letters
Volume	100
Issue number	16
DOIs	https://doi.org/10.1063/1.4704680
State	Published - Apr 16 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{2a3b099e8e564daf85a2d4be4ed97635,

title = "Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition",

abstract = "We report the epitaxial growth of Bi 2Se 3 thin films on (0001) Al 2O 3 substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi 2Se 3 films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 18cm -3 and a mobility of 900 cm 2/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi 2Se 3 films for topological insulator studies.",

author = "Brom, {Joseph E.} and Yue Ke and Renzhong Du and Dongjin Won and Xiaojun Weng and Kalissa Andre and Gagnon, {Jarod C.} and Mohney, {Suzanne E.} and Qi Li and Ke Chen and Xi, {X. X.} and Redwing, {Joan M.}",

note = "Funding Information: This work was supported by the National Science Foundation through the Penn State MRSEC Center for Nanoscale Science under Grant NSF-DMR-0820404 (J.M.R. and S.E.M.) and the Department of Energy under Grant DE-FG02-08ER4653 (Q.L.). ",

year = "2012",

month = apr,

day = "16",

doi = "10.1063/1.4704680",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

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T1 - Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition

AU - Brom, Joseph E.

AU - Ke, Yue

AU - Du, Renzhong

AU - Won, Dongjin

AU - Weng, Xiaojun

AU - Andre, Kalissa

AU - Gagnon, Jarod C.

AU - Mohney, Suzanne E.

AU - Li, Qi

AU - Chen, Ke

AU - Xi, X. X.

AU - Redwing, Joan M.

N1 - Funding Information: This work was supported by the National Science Foundation through the Penn State MRSEC Center for Nanoscale Science under Grant NSF-DMR-0820404 (J.M.R. and S.E.M.) and the Department of Energy under Grant DE-FG02-08ER4653 (Q.L.).

PY - 2012/4/16

Y1 - 2012/4/16

N2 - We report the epitaxial growth of Bi 2Se 3 thin films on (0001) Al 2O 3 substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi 2Se 3 films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 18cm -3 and a mobility of 900 cm 2/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi 2Se 3 films for topological insulator studies.

AB - We report the epitaxial growth of Bi 2Se 3 thin films on (0001) Al 2O 3 substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi 2Se 3 films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 18cm -3 and a mobility of 900 cm 2/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi 2Se 3 films for topological insulator studies.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162110

ER -

Structural and electrical properties of epitaxial Bi ₂Se ₃ thin films grown by hybrid physical-chemical vapor deposition

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