Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition

Joseph E. Brom; Yue Ke; Renzhong Du; Dongjin Won; Xiaojun Weng; Kalissa Andre; Jarod C. Gagnon; Suzanne E. Mohney; Qi Li; Ke Chen; X. X. Xi; Joan M. Redwing

doi:10.1063/1.4704680

Structural and electrical properties of epitaxial Bi ₂Se ₃ thin films grown by hybrid physical-chemical vapor deposition

Joseph E. Brom
, Yue Ke
, Renzhong Du
, Dongjin Won
, Xiaojun Weng
, Kalissa Andre
, Jarod C. Gagnon
, Suzanne E. Mohney
, Qi Li
, Ke Chen
, X. X. Xi
, Joan M. Redwing

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

We report the epitaxial growth of Bi ₂Se ₃ thin films on (0001) Al ₂O ₃ substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi ₂Se ₃ films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 ¹⁸cm ^-3 and a mobility of 900 cm ²/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi ₂Se ₃ films for topological insulator studies.

Original language	English (US)
Article number	162110
Journal	Applied Physics Letters
Volume	100
Issue number	16
DOIs	https://doi.org/10.1063/1.4704680
State	Published - Apr 16 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4704680

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@article{2a3b099e8e564daf85a2d4be4ed97635,

title = "Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition",

abstract = "We report the epitaxial growth of Bi 2Se 3 thin films on (0001) Al 2O 3 substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi 2Se 3 films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 18cm -3 and a mobility of 900 cm 2/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi 2Se 3 films for topological insulator studies.",

author = "Brom, \{Joseph E.\} and Yue Ke and Renzhong Du and Dongjin Won and Xiaojun Weng and Kalissa Andre and Gagnon, \{Jarod C.\} and Mohney, \{Suzanne E.\} and Qi Li and Ke Chen and Xi, \{X. X.\} and Redwing, \{Joan M.\}",

note = "Funding Information: This work was supported by the National Science Foundation through the Penn State MRSEC Center for Nanoscale Science under Grant NSF-DMR-0820404 (J.M.R. and S.E.M.) and the Department of Energy under Grant DE-FG02-08ER4653 (Q.L.). ",

year = "2012",

month = apr,

day = "16",

doi = "10.1063/1.4704680",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition

AU - Brom, Joseph E.

AU - Ke, Yue

AU - Du, Renzhong

AU - Won, Dongjin

AU - Weng, Xiaojun

AU - Andre, Kalissa

AU - Gagnon, Jarod C.

AU - Mohney, Suzanne E.

AU - Li, Qi

AU - Chen, Ke

AU - Xi, X. X.

AU - Redwing, Joan M.

N1 - Funding Information: This work was supported by the National Science Foundation through the Penn State MRSEC Center for Nanoscale Science under Grant NSF-DMR-0820404 (J.M.R. and S.E.M.) and the Department of Energy under Grant DE-FG02-08ER4653 (Q.L.).

PY - 2012/4/16

Y1 - 2012/4/16

N2 - We report the epitaxial growth of Bi 2Se 3 thin films on (0001) Al 2O 3 substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi 2Se 3 films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 18cm -3 and a mobility of 900 cm 2/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi 2Se 3 films for topological insulator studies.

AB - We report the epitaxial growth of Bi 2Se 3 thin films on (0001) Al 2O 3 substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi 2Se 3 films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 18cm -3 and a mobility of 900 cm 2/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi 2Se 3 films for topological insulator studies.

UR - https://www.scopus.com/pages/publications/84859957421

UR - https://www.scopus.com/pages/publications/84859957421#tab=citedBy

U2 - 10.1063/1.4704680

DO - 10.1063/1.4704680

M3 - Article

AN - SCOPUS:84859957421

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162110

ER -

Structural and electrical properties of epitaxial Bi ₂Se ₃ thin films grown by hybrid physical-chemical vapor deposition

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